INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
0070655235
NATIONAL BIBLIOGRAPHY NUMBER
Country Code
IR
Number
EN-56639
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
COUNTRY OF PUBLICATION OR PRODUCTlON
Country of publication
IR
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Operation and modeling of the MOS transistor
General Material Designation
[Book]
First Statement of Responsibility
/ Yannis Tsividis
EDITION STATEMENT
Edition Statement
2nd ed.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Boston
Name of Publisher, Distributor, etc.
: WCB/McGraw-Hill,
Date of Publication, Distribution, etc.
, c1999.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xx, 620 p. , ill. , 24 cm.
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Electronic
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
CONTENTS NOTE
Text of Note
"Extensively revised and updated, this, the second edition of the text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor - the key element of most modern microelectronic chips."--BOOK JACKET.
Text of Note
Ch. 1. Semiconductors, Junctions, and MOSFET Overview -- Ch. 2. Two-Terminal MOS Structure -- Ch. 3. Three-Terminal MOS Structure -- Ch. 4. Four-Terminal MOS Transistor -- Ch. 5. MOS Transistors with Ion-Implanted Channels -- Ch. 6. Small-Dimension Effects / D. Antoniadis -- Ch. 7. MOS Transistor in Dynamic Operation - Large-Signal Modeling -- Ch. 8. Small-Signal Modeling for Low and Medium Frequencies -- Ch. 9. High-Frequency Small-Signal Models -- Ch. 10. MOSFET Modeling for Circuit Simulation -- App. A. Energy Bands and Related Concepts -- App. B. Basic Laws of Electrostatics in One Dimension -- App. C. Charge Density, Electric Field, and Potential in the pn Junction -- App. D. Energy Band Diagrams for the Two-Terminal MOS Structure -- App. E. Charge Density, Electric Field, and Potential in the Two-Terminal MOS Structure -- App. F. General Analysis of the Two-Terminal MOS Structure -- App. G. Careful Definitions for the Limits of Moderate Inversion -- App. H. Energy Band Diagrams for the Three-Terminal MOS Structure -- App. I. General Analysis of the Three-Terminal MOS Structure -- App. J. Drain Current Formulation Using Quasi-Fermi Potentials -- App. K. Results of a Detailed Formulation for the Drain Current and Drain Small-Signal Conductance in the Saturation Region -- App. L. Evaluation of the Intrinsic Transient Source and Drain Currents -- App. M. Charges for the Accurate Strong-Inversion Model -- App. N. Quantities Used in the Derivation of the Non-Quasi-Static y-Parameter Model.
OTHER VARIANT TITLES
Variant Title
MOS transistor
TOPICAL NAME USED AS SUBJECT
Metal oxide semiconductors , Mathematical models
Metal oxide semiconductor field-effect transistors , Mathematical models
LIBRARY OF CONGRESS CLASSIFICATION
Class number
E-BOOK
PERSONAL NAME - PRIMARY RESPONSIBILITY
Tsividis, Yannis.
ORIGINATING SOURCE
Country
ایران
ELECTRONIC LOCATION AND ACCESS
Host name
0070655235.pdf
Access number
عادی
Compression information
عادی
Date and Hour of Consultation and Access
0070655235.pdf
Electronic Format Type
متن
old catalog
e
BL
1
a
Y
