0070655235
IR
EN-56639
انگلیسی
IR
Operation and modeling of the MOS transistor
[Book]
/ Yannis Tsividis
2nd ed.
Boston
: WCB/McGraw-Hill,
, c1999.
xx, 620 p. , ill. , 24 cm.
Electronic
Includes bibliographical references and index.
"Extensively revised and updated, this, the second edition of the text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor - the key element of most modern microelectronic chips."--BOOK JACKET.
Ch. 1. Semiconductors, Junctions, and MOSFET Overview -- Ch. 2. Two-Terminal MOS Structure -- Ch. 3. Three-Terminal MOS Structure -- Ch. 4. Four-Terminal MOS Transistor -- Ch. 5. MOS Transistors with Ion-Implanted Channels -- Ch. 6. Small-Dimension Effects / D. Antoniadis -- Ch. 7. MOS Transistor in Dynamic Operation - Large-Signal Modeling -- Ch. 8. Small-Signal Modeling for Low and Medium Frequencies -- Ch. 9. High-Frequency Small-Signal Models -- Ch. 10. MOSFET Modeling for Circuit Simulation -- App. A. Energy Bands and Related Concepts -- App. B. Basic Laws of Electrostatics in One Dimension -- App. C. Charge Density, Electric Field, and Potential in the pn Junction -- App. D. Energy Band Diagrams for the Two-Terminal MOS Structure -- App. E. Charge Density, Electric Field, and Potential in the Two-Terminal MOS Structure -- App. F. General Analysis of the Two-Terminal MOS Structure -- App. G. Careful Definitions for the Limits of Moderate Inversion -- App. H. Energy Band Diagrams for the Three-Terminal MOS Structure -- App. I. General Analysis of the Three-Terminal MOS Structure -- App. J. Drain Current Formulation Using Quasi-Fermi Potentials -- App. K. Results of a Detailed Formulation for the Drain Current and Drain Small-Signal Conductance in the Saturation Region -- App. L. Evaluation of the Intrinsic Transient Source and Drain Currents -- App. M. Charges for the Accurate Strong-Inversion Model -- App. N. Quantities Used in the Derivation of the Non-Quasi-Static y-Parameter Model.
MOS transistor
Metal oxide semiconductors , Mathematical models
Metal oxide semiconductor field-effect transistors , Mathematical models
E-BOOK
Tsividis, Yannis.
ایران
0070655235.pdf
عادی
عادی
0070655235.pdf
متن
old catalog
e
BL
1
a
Y
