Design and Fabrication of Vertical GaN Transistors for High-Power and High-Frequency Applications
General Material Designation
[Thesis]
First Statement of Responsibility
Wenwen Li
Subsequent Statement of Responsibility
Chowdhury, Srabanti
.PUBLICATION, DISTRIBUTION, ETC
Name of Publisher, Distributor, etc.
University of California, Davis
Date of Publication, Distribution, etc.
2017
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
160
GENERAL NOTES
Text of Note
Committee members: Gu, Q. Jane; Islam, M. Saif
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Place of publication: United States, Ann Arbor; ISBN=978-0-355-76427-7
DISSERTATION (THESIS) NOTE
Dissertation or thesis details and type of degree
Ph.D.
Discipline of degree
Electrical and Computer Engineering
Body granting the degree
University of California, Davis
Text preceding or following the note
2017
SUMMARY OR ABSTRACT
Text of Note
Gallium nitride (GaN) is proving itself as the preferred material for high-power and high-frequency applications. Due to the increasing availability of bulk GaN substrates, vertical GaN transistors are coming to the forefront of research. Vertical structure is suitable for high-power applications as it minimizes surface-related dispersion issues prevailing in lateral high-electron-mobility transistors (HEMTs) and simultaneously provides a more economical solution for the same current rating.
TOPICAL NAME USED AS SUBJECT
Electrical engineering
UNCONTROLLED SUBJECT TERMS
Subject Term
Applied sciences;Gallium nitride;Metal Oxide Semiconductor Vertical Field Electron Transistors;Static Induction Transistors