عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
TL49822
انگلیسی
Design and Fabrication of Vertical GaN Transistors for High-Power and High-Frequency Applications
[Thesis]
Wenwen Li
Chowdhury, Srabanti
University of California, Davis
2017
160
Committee members: Gu, Q. Jane; Islam, M. Saif
Place of publication: United States, Ann Arbor; ISBN=978-0-355-76427-7
Ph.D.
Electrical and Computer Engineering
University of California, Davis
2017
Gallium nitride (GaN) is proving itself as the preferred material for high-power and high-frequency applications. Due to the increasing availability of bulk GaN substrates, vertical GaN transistors are coming to the forefront of research. Vertical structure is suitable for high-power applications as it minimizes surface-related dispersion issues prevailing in lateral high-electron-mobility transistors (HEMTs) and simultaneously provides a more economical solution for the same current rating.
Electrical engineering
Applied sciences;Gallium nitride;Metal Oxide Semiconductor Vertical Field Electron Transistors;Static Induction Transistors
Alshammari, Mohammed
Chowdhury, Srabanti
Electrical and Computer Engineering
University of California, Davis
2025922935; 10682412
مطالعه متن کتاب p
[Thesis]
276903
a
Y
