Silicon devices and process integration : deep submicron and nano-scale technologies
وضعیت نشر و پخش و غیره
محل نشرو پخش و غیره
New York
نام ناشر، پخش کننده و غيره
Springer
تاریخ نشرو بخش و غیره
2009
مشخصات ظاهری
نام خاص و کميت اثر
xxv, 597 p. : ill. ; 24 cm
يادداشت کلی
متن يادداشت
Silicon Properties.- Junctions and Contacts.- The Bipolar Transistor.- The MOS Structure.- Insulated-Gate Field-Effect Transistor.- Analog Devices and Passive Components.- Enabling Processes and Integration.- Applications
یادداشتهای مربوط به عنوان و پدیدآور
متن يادداشت
Badih El-Kareh
یادداشتهای مربوط به مسئولیت معنوی اثر
متن يادداشت
Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author's industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: * A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; * State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; * CMOS-only applications, such as subthreshold current and parasitic latch-up; * Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science
فروست (داده ارتباطی)
کدن
9780387367989 )hardcover : alk. paper(
موضوع (اسم عام یاعبارت اسمی عام)
عنصر شناسه ای
، Metal oxide semiconductors, Complementary
عنصر شناسه ای
Design ، Linear integrated circuits
عنصر شناسه ای
، Electronics engineering
رده بندی کنگره
شماره رده
QC
611
.
8
.
S55
2009
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )