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عنوان
Silicon devices and process integration : deep submicron and nano-scale technologies

پدید آورنده
El-Kareh, Badih.

موضوع
، Metal oxide semiconductors, Complementary,Design ، Linear integrated circuits,، Electronics engineering

رده
QC
611
.
8
.
S55
2009

کتابخانه
Library of Razi Metallurgical Research Center

محل استقرار
استان: Tehran ـ شهر: Tehran

Library of Razi Metallurgical Research Center

تماس با کتابخانه : 46831570-021

OTHER STANDARD IDENTIFIER

Standard Number
electronic

TITLE AND STATEMENT OF RESPONSIBILITY

First Statement of Responsibility
El-Kareh, Badih.
Title Proper
Silicon devices and process integration : deep submicron and nano-scale technologies

.PUBLICATION, DISTRIBUTION, ETC

Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Springer
Date of Publication, Distribution, etc.
2009

PHYSICAL DESCRIPTION

Specific Material Designation and Extent of Item
xxv, 597 p. : ill. ; 24 cm

GENERAL NOTES

Text of Note
Silicon Properties.- Junctions and Contacts.- The Bipolar Transistor.- The MOS Structure.- Insulated-Gate Field-Effect Transistor.- Analog Devices and Passive Components.- Enabling Processes and Integration.- Applications

NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY

Text of Note
Badih El-Kareh

NOTES PERTAINING TO RESPONSIBILITY

Text of Note
Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author's industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: * A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; * State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; * CMOS-only applications, such as subthreshold current and parasitic latch-up; * Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science

SERIES

CODEN
9780387367989 )hardcover : alk. paper(

TOPICAL NAME USED AS SUBJECT

Entry Element
، Metal oxide semiconductors, Complementary
Entry Element
Design ، Linear integrated circuits
Entry Element
، Electronics engineering

LIBRARY OF CONGRESS CLASSIFICATION

Class number
QC
611
.
8
.
S55
2009

PERSONAL NAME - PRIMARY RESPONSIBILITY

Relator Code
AU

TI

Proposal/Bug Report

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