عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
TL49045
انگلیسی
Experimental and simulation study of gate controlled resistance switching memory
[Thesis]
Nurunnahar Islam Mou
Tabib-Azar, Massood
The University of Utah
2016
92
Committee members: Mastrangelo, Carlos; Simpson, Jamesina
Place of publication: United States, Ann Arbor; ISBN=978-1-369-18216-3
M.S.
Electrical and Computer Engineering
The University of Utah
2016
Scaling limitation of current memory technology requires invention of a new class of memory that has high density, fast programming and access time, as well as good nonvolatility. Resistive switching memories or memristors are good candidates for such application. Anticipated advantages of these devices include long retention time, high access speed, endurance, low power, high density, and scalability. Memristors were first proposed theoretically by L. Chua in 1971, but it did not come into practical implementation until 2008 when researchers in the HP lab fabricated and recognized the first ever memristor.
Electrical engineering
Applied sciences;Gated memristor;Memristor
Mian, Mohammad Rajibul Islam
Tabib-Azar, Massood
Electrical and Computer Engineering
The University of Utah
1844993705; 10163525
مطالعه متن کتاب p
[Thesis]
276903
a
Y
