NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Place of publication: United States, Ann Arbor; ISBN=978-1-369-18216-3
DISSERTATION (THESIS) NOTE
Dissertation or thesis details and type of degree
M.S.
Discipline of degree
Electrical and Computer Engineering
Body granting the degree
The University of Utah
Text preceding or following the note
2016
SUMMARY OR ABSTRACT
Text of Note
Scaling limitation of current memory technology requires invention of a new class of memory that has high density, fast programming and access time, as well as good nonvolatility. Resistive switching memories or memristors are good candidates for such application. Anticipated advantages of these devices include long retention time, high access speed, endurance, low power, high density, and scalability. Memristors were first proposed theoretically by L. Chua in 1971, but it did not come into practical implementation until 2008 when researchers in the HP lab fabricated and recognized the first ever memristor.