عرض القائمة
الرئیسیة
البحث المتقدم
قائمة المکتبات
إختر اللغة
فارسی
English
العربی
عنوان
Hydrogen in Crystalline Semiconductors
پدید آورنده
by Stephen J. Pearton, James W. Corbett, Michael Stavola.
موضوع
Electronics.,Physical organic chemistry.,Physics.
رده
QC611
.
6
.
D4
B978
1992
کتابخانه
کتابخانه مطالعات اسلامی به زبان های اروپایی
محل استقرار
استان:
قم
ـ شهر:
قم
تماس با کتابخانه :
32910706
-
025
3540539239
3642847781
9783540539230
9783642847783
b574597
Hydrogen in Crystalline Semiconductors
[Book]
by Stephen J. Pearton, James W. Corbett, Michael Stavola.
Berlin, Heidelberg
Springer Berlin Heidelberg
1992
(xii, 363 pages 250 illustrations)
Springer series in materials science, 16.
1. Introduction --; 2. Hydrogen Incorporation in Crystalline Semiconductors --; 2.1 Techniques for Hydrogen Incorporation in Semiconductors --; 2.2 Survey of the Configurations of Hydrogen in Semiconductors --; 3. Passivation of Deep Levels by Hydrogen --; 3.1 Deep-Level Passivation in Silicon --; 3.2 Passivation of Defects in Gallium Arsenide --; 3.3 Aluminum Gallium Arsenide --; 3.4 Gallium Phosphide --; 3.5 CdHgTe, Zn3P2 --; 3.6 Germanium --; 4. Shallow Impurity Passivation by Atomic Hydrogen --; 4.1 Silicon --; 4.2 Gallium Arsenide --; 4.3 AlGaAs --; 4.4 CdTe and ZnTe --; 4.5 Gallium Phosphide --; 4.6 Germanium --; 4.7 Indium Phosphide --; 4.8 BN and BP --; 4.9 Correlation with Muonium --; 5. Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy --; 5.1 Vibrational Spectroscopy of H-Related Complexes --; 5.2 Uniaxial Stress Studies of H-Related Complexes --; 5.3 Hydrogen Motion in the B-H Complex --; 5.4 Conclusion --; 6. The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors --; 6.1 Acceptor-H Complexes --; 6.2 Donor-H Complexes --; 6.3 Unintentional Hydrogenation --; 6.4 Uniaxial Stress Studies --; 6.5 Cluster Calculations for H-Related Complexes in GaAs --; 6.6 Conclusion --; 7. Hydrogen, and Semiconductor Surfaces and Surface Layers --; 7.1 Etching of Silicon Surfaces by Hydrogen --; 7.2 Plasma Etching --; 7.3 Implantation of Protons --; 7.4 Hydrogen on Semiconductor Surfaces --; 8. Hydrogen-Related Defects in Semiconductors --; 8.1 Hydrogen-Related Defects in Silicon --; 8.2 Hydrogen-Related Defects in Germanium --; 8.3 Hydrogen-Related Defects in Compound Semiconductors --; 8.4 Hydrogen-Related IR Bands in Silicon --; 9. Diffusion of Hydrogen in Semiconductors --; 9.1 Diffusion of Hydrogen in Solids --; 9.2 Diffusion Equations --; 9.3 Analysis of Diffusion Profiles --; 9.4 Diffusion of Hydrogen in Silicon --; 9.5 Diffusion of Hydrogen in Germanium --; 9.6 Diffusion in Gallium Arsenide --; 9.7 Diffusion of Hydrogen in Other Materials --; 9.8 Summary --; 10. Resonance Studies Pertinent to Hydrogen in Semiconductors --; 10.1 Electron Paramagnetic Resonance --; 10.2 Related Muon Studies --; 10.3 Perturbed Angular Correlation --; 11. Prevalence of Hydrogen Incorporation and Device Applications --; 11.1 Experimental Studies of Hydrogen Incorporation --; 11.2 Hydrogen Sensing with MOS Structures --; 11.3 Hydrogen in III-V Semiconductors --; 12. Hydrogen and the Mechanical Properties of Semiconductors --; 12.1 Hydrogen Embrittlement --; 12.2 Hydrogen-Related Defects --; 12.3 m-V Semiconductors --; References.
Vgl. Hardcoverausgabe.
Electronics.
Physical organic chemistry.
Physics.
QC611
.
6
.
D4
B978
1992
by Stephen J. Pearton, James W. Corbett, Michael Stavola.
James W Corbett
Michael Stavola
Stephen J Pearton
مطالعه متن کتاب
[Book]
Y
الاقتراح / اعلان الخلل
×
الاقتراح / اعلان الخلل
×
تحذیر!
دقق في تسجیل المعلومات
اعلان الخلل
اقتراح