عنوان

Hydrogen in Crystalline Semiconductors

(Number (ISBN

3540539239

(Number (ISBN

3642847781

(Number (ISBN

9783540539230

(Number (ISBN

9783642847783

Number

b574597

Title Proper

Hydrogen in Crystalline Semiconductors

General Material Designation

[Book]

First Statement of Responsibility

by Stephen J. Pearton, James W. Corbett, Michael Stavola.

Place of Publication, Distribution, etc.

Berlin, Heidelberg

Name of Publisher, Distributor, etc.

Springer Berlin Heidelberg

Date of Publication, Distribution, etc.

1992

Specific Material Designation and Extent of Item

(xii, 363 pages 250 illustrations)

Series Title

Springer series in materials science, 16.

Text of Note

1. Introduction --; 2. Hydrogen Incorporation in Crystalline Semiconductors --; 2.1 Techniques for Hydrogen Incorporation in Semiconductors --; 2.2 Survey of the Configurations of Hydrogen in Semiconductors --; 3. Passivation of Deep Levels by Hydrogen --; 3.1 Deep-Level Passivation in Silicon --; 3.2 Passivation of Defects in Gallium Arsenide --; 3.3 Aluminum Gallium Arsenide --; 3.4 Gallium Phosphide --; 3.5 CdHgTe, Zn3P2 --; 3.6 Germanium --; 4. Shallow Impurity Passivation by Atomic Hydrogen --; 4.1 Silicon --; 4.2 Gallium Arsenide --; 4.3 AlGaAs --; 4.4 CdTe and ZnTe --; 4.5 Gallium Phosphide --; 4.6 Germanium --; 4.7 Indium Phosphide --; 4.8 BN and BP --; 4.9 Correlation with Muonium --; 5. Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy --; 5.1 Vibrational Spectroscopy of H-Related Complexes --; 5.2 Uniaxial Stress Studies of H-Related Complexes --; 5.3 Hydrogen Motion in the B-H Complex --; 5.4 Conclusion --; 6. The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors --; 6.1 Acceptor-H Complexes --; 6.2 Donor-H Complexes --; 6.3 Unintentional Hydrogenation --; 6.4 Uniaxial Stress Studies --; 6.5 Cluster Calculations for H-Related Complexes in GaAs --; 6.6 Conclusion --; 7. Hydrogen, and Semiconductor Surfaces and Surface Layers --; 7.1 Etching of Silicon Surfaces by Hydrogen --; 7.2 Plasma Etching --; 7.3 Implantation of Protons --; 7.4 Hydrogen on Semiconductor Surfaces --; 8. Hydrogen-Related Defects in Semiconductors --; 8.1 Hydrogen-Related Defects in Silicon --; 8.2 Hydrogen-Related Defects in Germanium --; 8.3 Hydrogen-Related Defects in Compound Semiconductors --; 8.4 Hydrogen-Related IR Bands in Silicon --; 9. Diffusion of Hydrogen in Semiconductors --; 9.1 Diffusion of Hydrogen in Solids --; 9.2 Diffusion Equations --; 9.3 Analysis of Diffusion Profiles --; 9.4 Diffusion of Hydrogen in Silicon --; 9.5 Diffusion of Hydrogen in Germanium --; 9.6 Diffusion in Gallium Arsenide --; 9.7 Diffusion of Hydrogen in Other Materials --; 9.8 Summary --; 10. Resonance Studies Pertinent to Hydrogen in Semiconductors --; 10.1 Electron Paramagnetic Resonance --; 10.2 Related Muon Studies --; 10.3 Perturbed Angular Correlation --; 11. Prevalence of Hydrogen Incorporation and Device Applications --; 11.1 Experimental Studies of Hydrogen Incorporation --; 11.2 Hydrogen Sensing with MOS Structures --; 11.3 Hydrogen in III-V Semiconductors --; 12. Hydrogen and the Mechanical Properties of Semiconductors --; 12.1 Hydrogen Embrittlement --; 12.2 Hydrogen-Related Defects --; 12.3 m-V Semiconductors --; References.

Text of Note

Vgl. Hardcoverausgabe.

Electronics.

Physical organic chemistry.

Physics.

Class number

Book number

by Stephen J. Pearton, James W. Corbett, Michael Stavola.

James W Corbett

Michael Stavola

Stephen J Pearton

Electronic name

[Book]

Y