NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits )2891 : Urbino, Italy(
Process and device simulation for MOS-VLSI circuits
Boston
Nijhoff ; Hingham, MA : Distributors for the U.S. and Canada, Kluwer Boston
1983
xii, 619 p.: ill.; 25 cm
NATO ASI series. Series E, Applied sciences ; no. 26
"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso
"Published in cooperation with NATO Scientific Affairs Division."
Includes bibliographical references
، Integrated circuits- Very large scale integration- Simulation methods- Congresses
، Metal oxide semiconductors- Simulation methods- Congresses