NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits )2891 : Urbino, Italy(
Title Proper
Process and device simulation for MOS-VLSI circuits
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Boston
Name of Publisher, Distributor, etc.
Nijhoff ; Hingham, MA : Distributors for the U.S. and Canada, Kluwer Boston
Date of Publication, Distribution, etc.
1983
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xii, 619 p.: ill.; 25 cm
SERIES
Series Title
NATO ASI series. Series E, Applied sciences ; no. 26
GENERAL NOTES
Text of Note
"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso
Text of Note
"Published in cooperation with NATO Scientific Affairs Division."
Text of Note
Includes bibliographical references
TOPICAL NAME USED AS SUBJECT
Entry Element
، Integrated circuits- Very large scale integration- Simulation methods- Congresses
Entry Element
، Metal oxide semiconductors- Simulation methods- Congresses