عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
شماره کتابشناسی ملی
شماره
TLpq304282876
زبان اثر
زبان متن نوشتاري يا گفتاري و مانند آن
انگلیسی
عنوان و نام پديدآور
عنوان اصلي
MOCVD-grown visible light-emitting devices using native oxides of compound semiconductors
نام عام مواد
[Thesis]
نام نخستين پديدآور
M. R. Islam
نام ساير پديدآوران
R. D. Dupuis
وضعیت نشر و پخش و غیره
نام ناشر، پخش کننده و غيره
The University of Texas at Austin
تاریخ نشرو بخش و غیره
1996
مشخصات ظاهری
نام خاص و کميت اثر
100
یادداشتهای مربوط به پایان نامه ها
جزئيات پايان نامه و نوع درجه آن
Ph.D.
کسي که مدرک را اعطا کرده
The University of Texas at Austin
امتياز متن
1996
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
Visible light emitting devices based on the InAlGaP material system are of great technological interest because of their applications in optical information processing such as high-definition television (HDTV) and plastic-fiber-based telecommunication. The high-power performance of these devices are limited by the low conduction-band offset available in this material system. A novel distributed electron wave reflector in the form of an InAlP/InGaP strain modulated aperidic superlattice heterobarrier (SMASH) structure has been proposed and shown to effectively increase the electron confinining potential. InAlP/InGaP light-emitting diodes using the SMASH barrier exhibited enhanced light output compared to similar devices utilizing other conventional barrier structures. The effects of the native oxides of compound semiconductors on the electrical and optical properties of light-emitting materials and devices were also studied. Thermally grown native oxides of Al-rich compound semiconductors are similar in nature to SiO2 and is formed in much the same way. Their insulating properties and low index of refraction (n 1.6) have made them useful for electrical and optical confinement in various light emitting device structures. The native oxides derived from InAlP and AlGaAs were compared in terms of their effect on the luminescence properties of InGaP and GaAs. Extensive photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements indicated that a "phosphorus" oxide (derived from InAlP) possibly has a superior interface quality compared to an "arsenic" oxide such as resulting from the oxidation of AlGaAs. Lasing action was demonstrated in an undoped, photopumped vertical-cavity InAlP/InGaP structure employing the SMASH barrier and the native oxide/semiconductor DBR mirrors.
موضوع (اسم عام یاعبارت اسمی عام)
موضوع مستند نشده
Applied sciences
موضوع مستند نشده
Electrical engineering
موضوع مستند نشده
indium gallium aluminum phosphide
موضوع مستند نشده
Materials science
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )
مستند نام اشخاص تاييد نشده
M. R. Islam
مستند نام اشخاص تاييد نشده
R. D. Dupuis
دسترسی و محل الکترونیکی
نام الکترونيکي
مطالعه متن کتاب وضعیت انتشار
فرمت انتشار
p
اطلاعات رکورد کتابشناسی
نوع ماده
[Thesis]
کد کاربرگه
276903
اطلاعات دسترسی رکورد
سطح دسترسي
a
تكميل شده
Y
