عنوان

Graphene nanostructures :

شابک

0429022212

شابک

0429661150

شابک

0429663870

شابک

0429666594

شابک

9780429022210

شابک

9780429661150

شابک

9780429663871

شابک

9780429666599

شابک اشتباه

9789814800365

شابک اشتباه

9814800368

عنوان اصلي

Graphene nanostructures :

نام عام مواد

[Book]

ساير اطلاعات عنواني

modeling, simulation, and applications in electronics and photonics /

نام نخستين پديدآور

Yaser M. Banadaki, Safura Sharifi.

محل نشرو پخش و غیره

Singapore :

نام ناشر، پخش کننده و غيره

Pan Stanford Publishing,

تاریخ نشرو بخش و غیره

2019.

نام خاص و کميت اثر

1 online resource

متن يادداشت

Introduction to Graphene. Graphene for Integrated Circuits. Computational Carrier Transport Model of GNRFET. Scaling Effects on Performance of GNRFETs. Width-dependent Performance of GNRFETs. A Spice Physics-based Circuit Model of GNRFET. Graphene-based Circuits Design. Graphene Sensing and Energy Recovery. Graphene Photonic Properties and Applications. Graphene-based Thermal Emitter.

متن يادداشت

Cover; Half Title; Title Page; Copyright Page; Contents; Preface; 1. Introduction to Graphene; 1.1 Physical Geometry and Properties; 1.2 Graphene Nanoribbon; 2. Graphene for Integrated Circuits; 2.1 Introduction; 2.2 Scaling Challenges of Silicon Electronics; 2.3 Graphene-Based Field-Effect Transistors; 2.4 Graphene-Based Integrated Circuits; 3. Computational Carrier Transport Model of GNRFET; 3.1 Introduction; 3.2 Quantum Transport Model; 3.3 Quantum Capacitance in GNRFET; 3.4 Computational Time; 3.5 Summary; 4. Scaling Effects on Performance of GNRFETs; 4.1 Introduction

متن يادداشت

4.2 Device Structure4.3 Transfer Characteristics of GNRFETs; 4.4 Scaling Effects on Static Metric of GNRFETs; 4.4.1 OFF-Current; 4.4.2 I[sub(ON)]/I[sub(OFF)] Ratio; 4.4.3 Subthreshold Swing; 4.4.4 Drain-Induced Barrier Lowering; 4.4.5 Voltage Transfer Characteristic; 4.5 Scaling Effects on Switching Attributes of GNRFETs; 4.5.1 Intrinsic Gate Capacitance; 4.5.2 Intrinsic Cut-off Frequency; 4.5.3 Intrinsic Gate-Delay Time; 4.5.4 Power-Delay Product; 4.6 Summary; 5. Width-Dependent Performance of GNRFETs; 5.1 Introduction; 5.2 Device Structure; 5.3 GNR Sub-bands

متن يادداشت

5.4 Width-Dependent Static Metrics of GNRFETs5.4.1 OFF-Current; 5.4.2 I[sub(ON)]/I[sub(OFF)] Ratio; 5.4.3 Subthreshold Swing; 5.5 Width-Dependent Switching Attribute of GNRFETs; 5.5.1 Threshold Voltage; 5.5.2 Transconductance; 5.5.3 Intrinsic Gate Capacitance; 5.5.4 Intrinsic Cut-off Frequency; 5.5.5 Intrinsic Gate-Delay Time; 5.6 Summary; 6. A SPICE Physics-Based Circuit Model of GNRFETs; 6.1 Introduction; 6.2 GNRFET Structure; 6.3 GNRFET Model; 6.3.1 Computing GNR Sub-bands; 6.3.2 Finding Channel Surface Potential; 6.3.2.1 Computing channel charge

متن يادداشت

6.3.2.2 Computing transient capacitance charge6.3.3 Current Modeling; 6.3.3.1 Computing thermionic current; 6.3.3.2 BTBT current and charge; 6.3.4 Non-ballistic Transport; 6.3.5 Extracting Fitting Parameters; 6.4 Model Validation; 6.4.1 Comparing with Computational NEGF Formalism; 6.4.2 Comparing with Many-Body Problem; 6.5 Effect of Edge Roughness on Device Characteristic; 6.5.1 Transfer Characteristics of GNRFETs; 6.5.2 OFF-State Characteristics of GNRFETs; 6.6 Summary; 7. Graphene-Based Circuit Design; 7.1 Introduction; 7.2 All-Graphene Circuits; 7.3 Graphene Inverter

متن يادداشت

7.4 Power and Delay of GNRFET Circuits7.5 GNRFET-Based Energy Recovery Logic Design; 7.6 Summary; 8. Graphene Sensing and Energy Recovery; 8.1 Introduction; 8.2 GNRFET-Based Temperature Sensors; 8.3 GNRFET for Energy Harvesting; 8.3.1 Thermoelectric Model; 8.3.2 Electrical Conductivity; 8.3.3 Seebeck Coefficient; 8.3.4 Electrical Thermal Conductivity; 8.3.5 Power Factor; 8.3.6 Thermoelectric Figure-of-Merit ZT; 8.4 Summary; 9. Graphene Photonic Properties and Applications; 9.1 Introduction; 9.2 Photonic Properties; 9.3 Graphene Photonic Applications

بدون عنوان

0

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

متن يادداشت

Tremendous innovations in electronics and photonics over the past few decades have resulted in the downsizing of transistors in integrated circuits, which are now approaching atomic scales. This will soon result in the creation of a growing knowledge gap between the underlying technology and state-of-the-art electronic device modeling and simulations. This book bridges the gap by presenting cutting-edge research in the computational analysis and mathematical modeling of graphene nanostructures as well as the recent progress on graphene transistors for nanoscale circuits. It inspires and educates fellow circuit designers and students in the field of emerging low-power and high-performance circuit designs based on graphene. While most of the books focus on the synthesis, fabrication, and characterization of graphene, this book shines a light on graphene models and their circuit simulations and applications in photonics. It will serve as a textbook for graduate-level courses in nanoscale electronics and photonics design and appeal to anyone involved in electrical engineering, applied physics, materials science, or nanotechnology research.

منبع سفارش / آدرس اشتراک

Taylor & Francis

منبع سفارش / آدرس اشتراک

Ingram Content Group

شماره انبار

9780429022210

شماره انبار

9780429663871

شماره استاندارد بين المللي کتاب و موسيقي

9789814800365

موضوع مستند نشده

Graphene.

موضوع مستند نشده

Nanoelectromechanical systems.

موضوع مستند نشده

Nanostructures.

موضوع مستند نشده

Graphene.

موضوع مستند نشده

Nanoelectromechanical systems.

موضوع مستند نشده

Nanostructures.

موضوع مستند نشده

SCIENCE-- Life Sciences-- General.

موضوع مستند نشده

TECHNOLOGY-- Electronics-- General.

موضوع مستند نشده

TECHNOLOGY-- Nanotechnology.

موضوع مستند نشده

SCI-- 086000

موضوع مستند نشده

TEC-- 008000

موضوع مستند نشده

TEC-- 027000

موضوع مستند نشده

TJFD

شماره

ويراست

شماره رده

نشانه اثر

مستند نام اشخاص تاييد نشده

Banadaki, Yaser M.

مستند نام اشخاص تاييد نشده

Sharifi, Safura

تاريخ عمليات

20200822111233.0

قواعد فهرست نويسي ( بخش توصيفي )

pn

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y