عنوان

Capacitance spectroscopy of semiconductors /

شابک

1315150131

شابک

1351368443

شابک

1351368451

شابک

9781315150130

شابک

9781351368445

شابک

9781351368452

شابک اشتباه

9789814774543

شابک اشتباه

9814774545

عنوان اصلي

Capacitance spectroscopy of semiconductors /

نام عام مواد

[Book]

نام نخستين پديدآور

edited by Jian V. Li, Giorgio Ferrari.

محل نشرو پخش و غیره

Singapore :

نام ناشر، پخش کننده و غيره

Pan Stanford Publishing,

تاریخ نشرو بخش و غیره

[2018]

تاریخ نشرو بخش و غیره

©2018

نام خاص و کميت اثر

1 online resource

متن يادداشت

Includes bibliographical references and index.

متن يادداشت

Cover; Half Title; Title Page; Copyright Page; Table of Contents; Preface; SECTION I: PHYSICS; 1: An Introduction to Capacitance Spectroscopy in Semiconductors; 1.1 Capacitance; 1.1.1 The Definitions of Capacitance; 1.1.2 Extraction of Capacitance from Equivalent Circuits; 1.2 Capacitances in Semiconductors; 1.2.1 Capacitance of an Insulator; 1.2.2 Capacitance of a Semiconductor at Equilibrium; 1.2.3 Capacitance of a Semiconductor Depleted of Carriers; 1.2.4 Capacitance of a Semiconductor with Excess Carriers; 1.2.5 Capacitance of a Semiconductor with Carrier Traps

متن يادداشت

1.3 Capacitance Spectroscopy1.3.1 Capacitance-Voltage Profiling; 1.3.2 Drive-Level Capacitance Profiling; 1.3.3 Admittance Spectroscopy; 1.3.4 Deep-Level Transient Spectroscopy; 1.4 Impedance Spectroscopy; 1.4.1 Experiment; 1.4.2 Graphical Analysis; 1.5 Summary; 2: Admittance Spectroscopy; 2.1 Principles of Admittance Spectroscopy; 2.2 Interpretation of Admittance Spectroscopy; 2.2.1 Series Resistance; 2.2.2 Defect Spectroscopy; 2.2.3 Carrier Freeze-Out; 2.2.4 Back Contact Diode; 2.2.5 Simulation; 2.3 Series Resistance; 2.4 Dielectric Relaxation; 2.5 Defect Spectroscopy

متن يادداشت

2.6 Back Contact Diode2.7 Phototransistor Model; 2.8 Discussion; 2.9 Conclusion; 3: Deep-Level Transient Spectroscopy; 3.1 Introduction; 3.2 The Principle; 3.2.1 Fourier-Transform Analysis; 3.2.2 Laplace DLTS; 3.2.3 Coupling of Defect Levels; 3.3 Carrier Capture Cross Section; 3.4 Minority Carrier Traps; 3.5 Extended Defects; 3.6 Heavily Compensated Semiconductors and Non-Uniform Doping Profile; 3.7 Anomalous Signals; 3.8 Summary; 4: Capacitance-Voltage and Drive-Level-Capacitance Profiling; 4.1 Depletion Capacitance and CV Profiling; 4.1.1 The Ideal One-Sided Diode with an Abrupt Junction

متن يادداشت

4.1.2 Influence of Series Resistance4.1.3 Influence of Interface States; 4.1.4 Capacitance in Forward Bias; 4.1.5 Metal-Insulator-Semiconductor Devices; 4.1.6 Experimental Details of CV; 4.2 Drive-Level Capacitance Profiling; 4.2.1 Theoretical Development of DLCP; 4.2.2 Experimental Details of DLCP; 4.2.3 Analyzing DLCP Data; 4.2.4 History of DLCP; 4.3 Comparing Results from Multiple Techniques; 4.3.1 Comparisons between DLCP and CV; 4.3.2 Comparisons with AS; 4.3.3 Other Quantitative Tests of DLCP; 4.4 Cautions and Opportunities for CV and DLCP; SECTION II: INSTRUMENTATION

متن يادداشت

5: Basic Techniques for Capacitance and Impedance Measurements5.1 Definitions; 5.2 Classification of Measurement Techniques; 5.3 Voltage Sensing; 5.3.1 Shunt Scheme; 5.3.2 Ratiometric Configuration; 5.3.3 Half Bridge; 5.3.4 Full Bridge; 5.4 Current Sensing; 5.4.1 Transimpedance Front-End; 5.4.2 Summary and Comparison; 5.5 Impedance Calculation; 5.5.1 Envelope Detector; 5.5.2 Synchronous Demodulation; 5.5.3 Sampling-Based Techniques; 5.6 Correction of Parasitics-Induced Inaccuracies; 5.6.1 Multi-Wire Schemes; 5.6.2 Calibration; 5.7 Other Techniques; 5.7.1 Resonant Techniques

بدون عنوان

0

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

متن يادداشت

Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advancesin capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.

عنوان

Capacitance spectroscopy of semiconductors.

شماره استاندارد بين المللي کتاب و موسيقي

9789814774543

موضوع مستند نشده

Semiconductors.

موضوع مستند نشده

Spectrum analysis.

موضوع مستند نشده

SCIENCE-- Physics-- Optics & Light.

موضوع مستند نشده

Semiconductors.

موضوع مستند نشده

Spectrum analysis.

موضوع مستند نشده

SCI-- 053000

موضوع مستند نشده

TJFN

شماره

ويراست

شماره رده

مستند نام اشخاص تاييد نشده

Ferrari, Giorgio

مستند نام اشخاص تاييد نشده

Li, Jian V.

تاريخ عمليات

20200822171055.0

قواعد فهرست نويسي ( بخش توصيفي )

pn

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y