عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
شابک
شابک
9401040788
شابک
9401101736
شابک
9789401040785
شابک
9789401101738
شماره کتابشناسی ملی
شماره
b594606
عنوان و نام پديدآور
عنوان اصلي
Wide Band Gap Electronic Materials
نام عام مواد
[Book]
نام نخستين پديدآور
edited by Mark A. Prelas, Peter Gielisse, Galina Popovici, Boris V. Spitsyn, Tina Stacy.
وضعیت نشر و پخش و غیره
محل نشرو پخش و غیره
Dordrecht
نام ناشر، پخش کننده و غيره
Springer Netherlands
تاریخ نشرو بخش و غیره
1995
مشخصات ظاهری
نام خاص و کميت اثر
(552 pages)
فروست
عنوان فروست
NATO ASI Series, 3. High Technology,, 1.
یادداشتهای مربوط به مندرجات
متن يادداشت
Preface. Diamond:- Growth and Doping. Characterization and Properties. Applications. Amorphous and Diamond-Like Carbon Films:- Growth and Doping. Characterization and Properties. Applications. Other Wide Band Gap Semiconductors:- Growth and Doping. Characterization and Properties. Applications. Oral Presentations. Poster Presentations. Author Index. Key Word Index.
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
Wide Band Gap Electronic Materials covers topics including electronic doping of diamond, n -type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide band gap electronic applications, and nanophase diamond.
One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices.
Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants.
Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.
One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices.
Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants.
Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.
عنوان اصلی به زبان دیگر
عنوان اصلي به زبان ديگر
Proceedings of the NATO Advanced Research Workshop on 'Wide Band Gap Electronic Materials -- Diamond, Aluminum Nitride and Boron Nitride', Minsk, Belarus, May 4--6, 1994
موضوع (اسم عام یاعبارت اسمی عام)
موضوع مستند نشده
Electronics -- Materials -- Congresses.
موضوع مستند نشده
Electronics -- Materials.
موضوع مستند نشده
Wide gap semiconductors -- Congresses.
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )
مستند نام اشخاص تاييد نشده
edited by Mark A. Prelas, Peter Gielisse, Galina Popovici, Boris V. Spitsyn, Tina Stacy.
نام شخص - (مسئولیت معنوی برابر )
مستند نام اشخاص تاييد نشده
Boris V Spitsyn
مستند نام اشخاص تاييد نشده
Galina Popovici
مستند نام اشخاص تاييد نشده
Mark A Prelas
مستند نام اشخاص تاييد نشده
Peter Gielisse
مستند نام اشخاص تاييد نشده
Tina Stacy
دسترسی و محل الکترونیکی
نام الکترونيکي
مطالعه متن کتاب اطلاعات رکورد کتابشناسی
نوع ماده
[Book]
اطلاعات دسترسی رکورد
تكميل شده
Y
