عنوان

Hydrogen in Crystalline Semiconductors

شابک

3540539239

شابک

3642847781

شابک

9783540539230

شابک

9783642847783

شماره

b574597

عنوان اصلي

Hydrogen in Crystalline Semiconductors

نام عام مواد

[Book]

نام نخستين پديدآور

by Stephen J. Pearton, James W. Corbett, Michael Stavola.

محل نشرو پخش و غیره

Berlin, Heidelberg

نام ناشر، پخش کننده و غيره

Springer Berlin Heidelberg

تاریخ نشرو بخش و غیره

1992

نام خاص و کميت اثر

(xii, 363 pages 250 illustrations)

عنوان فروست

Springer series in materials science, 16.

متن يادداشت

1. Introduction --; 2. Hydrogen Incorporation in Crystalline Semiconductors --; 2.1 Techniques for Hydrogen Incorporation in Semiconductors --; 2.2 Survey of the Configurations of Hydrogen in Semiconductors --; 3. Passivation of Deep Levels by Hydrogen --; 3.1 Deep-Level Passivation in Silicon --; 3.2 Passivation of Defects in Gallium Arsenide --; 3.3 Aluminum Gallium Arsenide --; 3.4 Gallium Phosphide --; 3.5 CdHgTe, Zn3P2 --; 3.6 Germanium --; 4. Shallow Impurity Passivation by Atomic Hydrogen --; 4.1 Silicon --; 4.2 Gallium Arsenide --; 4.3 AlGaAs --; 4.4 CdTe and ZnTe --; 4.5 Gallium Phosphide --; 4.6 Germanium --; 4.7 Indium Phosphide --; 4.8 BN and BP --; 4.9 Correlation with Muonium --; 5. Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy --; 5.1 Vibrational Spectroscopy of H-Related Complexes --; 5.2 Uniaxial Stress Studies of H-Related Complexes --; 5.3 Hydrogen Motion in the B-H Complex --; 5.4 Conclusion --; 6. The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors --; 6.1 Acceptor-H Complexes --; 6.2 Donor-H Complexes --; 6.3 Unintentional Hydrogenation --; 6.4 Uniaxial Stress Studies --; 6.5 Cluster Calculations for H-Related Complexes in GaAs --; 6.6 Conclusion --; 7. Hydrogen, and Semiconductor Surfaces and Surface Layers --; 7.1 Etching of Silicon Surfaces by Hydrogen --; 7.2 Plasma Etching --; 7.3 Implantation of Protons --; 7.4 Hydrogen on Semiconductor Surfaces --; 8. Hydrogen-Related Defects in Semiconductors --; 8.1 Hydrogen-Related Defects in Silicon --; 8.2 Hydrogen-Related Defects in Germanium --; 8.3 Hydrogen-Related Defects in Compound Semiconductors --; 8.4 Hydrogen-Related IR Bands in Silicon --; 9. Diffusion of Hydrogen in Semiconductors --; 9.1 Diffusion of Hydrogen in Solids --; 9.2 Diffusion Equations --; 9.3 Analysis of Diffusion Profiles --; 9.4 Diffusion of Hydrogen in Silicon --; 9.5 Diffusion of Hydrogen in Germanium --; 9.6 Diffusion in Gallium Arsenide --; 9.7 Diffusion of Hydrogen in Other Materials --; 9.8 Summary --; 10. Resonance Studies Pertinent to Hydrogen in Semiconductors --; 10.1 Electron Paramagnetic Resonance --; 10.2 Related Muon Studies --; 10.3 Perturbed Angular Correlation --; 11. Prevalence of Hydrogen Incorporation and Device Applications --; 11.1 Experimental Studies of Hydrogen Incorporation --; 11.2 Hydrogen Sensing with MOS Structures --; 11.3 Hydrogen in III-V Semiconductors --; 12. Hydrogen and the Mechanical Properties of Semiconductors --; 12.1 Hydrogen Embrittlement --; 12.2 Hydrogen-Related Defects --; 12.3 m-V Semiconductors --; References.

متن يادداشت

Vgl. Hardcoverausgabe.

موضوع مستند نشده

Electronics.

موضوع مستند نشده

Physical organic chemistry.

موضوع مستند نشده

Physics.

شماره رده

نشانه اثر

مستند نام اشخاص تاييد نشده

by Stephen J. Pearton, James W. Corbett, Michael Stavola.

مستند نام اشخاص تاييد نشده

James W Corbett

مستند نام اشخاص تاييد نشده

Michael Stavola

مستند نام اشخاص تاييد نشده

Stephen J Pearton

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y