یادداشتهای مربوط به کتابنامه ، واژه نامه و نمایه های داخل اثر
متن يادداشت
Includes bibliographical references and index
یادداشتهای مربوط به مندرجات
متن يادداشت
Section 1. Introduction -- 1.1 High-k gate dielectrics: Why do we need them? -- Section 2. Deposition techniques -- 2.1 Atomic layer deposition -- 2.2 Chemical vapour deposition -- 2.3 Pulsed laser deposition of dielectrics -- Section 3. Characterization -- 3.1 Oxygen diffusion -- 3.2 Defects in stacks of Si with nanometre thick high-k dielectric layers: Characterization and identification by electron spin resonance -- 3.3 Band alignment at the interface of Si and metals with high-permittivity insulating oxides -- 3.4 Electrical characterization, modelling and simulation of MOS structures with high-k gate stacks -- Section 4. Theory -- 4.1 Defects and defect-controlled behaviour in high-k materials: A theoretical perspective -- 4.2 Chemical bonding and electronic structure of high-k transition metal dielectrics: Applications to interfacial band offset energies and electronically active defects -- 4.3 Electronic structure and band offsets of high dielectric constant gate oxides -- 4.4 Reduction of the electron mobility in high-k MOS systems caused by remote scattering with soft interfacial optical phonons -- 4.5 Ab initio calculations of the structural, electronic and dynamical properties of high-k dielectrics -- 4.6 Defect generation under electrical stress: Experimental characterization and modelling -- Section 5. Technological aspects -- 5.1 Device integration issues -- 5.2 Device architectures for the nano-CMOS era -- 5.3 High-k transistor characteristics -- Appendix: Properties of high-k materials