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Strain-induced Effects in Advanced Mosfets
پدید آورنده
موضوع
Metal oxide semiconductor field-effect transistors, Computer simulation,Semiconductors, Defects
رده
TK7871
.
95
S85
2011
کتابخانه
Central Library, Center of Documentation and Supply of Scientific Resources
محل استقرار
استان:
East Azarbaijan
ـ شهر:
تماس با کتابخانه :
04133443834
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9783709103814
NATIONAL BIBLIOGRAPHY NUMBER
Country Code
IR
Number
E-5988
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
COUNTRY OF PUBLICATION OR PRODUCTlON
Country of publication
IR
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Strain-induced Effects in Advanced Mosfets
General Material Designation
[Book]
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
: Springer Verlag/Wien,
Date of Publication, Distribution, etc.
, 2011.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
252 p. , ill. , 25 cm.
SERIES
Series Title
(Computational microelectronics.)
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Print
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
SERIES
Title
Computational microelectronics
TOPICAL NAME USED AS SUBJECT
Metal oxide semiconductor field-effect transistors, Computer simulation
Semiconductors, Defects
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK7871
.
95
Book number
S85
2011
PERSONAL NAME - PRIMARY RESPONSIBILITY
Sverdlov, Viktor.
ORIGINATING SOURCE
Country
ایران
old catalog
p
BL
1
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