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Charged semiconductor defects: structure, thermodynamics and diffusion
پدید آورنده
Seebauer, Edmund Gerard
موضوع
Defects ، Semiconductors
رده
QC
611
.
6
.
D4
S43
کتابخانه
Central Library and Documents Center of Industrial University of Khaje Nasiredin Toosi
محل استقرار
استان:
Tehran
ـ شهر:
Tehran
تماس با کتابخانه :
88881052
-
88881042
-
021
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Charged semiconductor defects: structure, thermodynamics and diffusion
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
London
Name of Publisher, Distributor, etc.
Springer
Date of Publication, Distribution, etc.
c2009
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xiv, 294 p. : ill
SERIES
Other Title Information
Engineering materials and processes
GENERAL NOTES
Text of Note
Includes bibliographical references and index
NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY
Text of Note
Edmund G. Seebauer, Meredith C. Kratzer
TOPICAL NAME USED AS SUBJECT
Entry Element
Defects ، Semiconductors
LIBRARY OF CONGRESS CLASSIFICATION
Class number
QC
611
.
6
.
D4
S43
PERSONAL NAME - PRIMARY RESPONSIBILITY
Entry Element
Seebauer, Edmund Gerard
Relator Code
AU
AU Kratzer, Meredith C
TI
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