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VLSI fabrication principles: silicon and gallium arsenide
پدید آورنده
Ghandhi, Sorab K.
موضوع
، Integrated circuits- Very large scale integration,، Silicon,، Gallium arsenide
رده
TK
7874
.
G473
1994
کتابخانه
Central Library and Documents Center of Industrial University of Khaje Nasiredin Toosi
محل استقرار
استان:
Tehran
ـ شهر:
Tehran
تماس با کتابخانه :
88881052
-
88881042
-
021
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
VLSI fabrication principles: silicon and gallium arsenide
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Wiley
Date of Publication, Distribution, etc.
1994
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xxiv, 834 p. : ill
GENERAL NOTES
Text of Note
Includes bibliographical references and index
NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY
Text of Note
Sorab K. Ghandhi
ORIGINAL VERSION NOTE
Text of Note
1
TOPICAL NAME USED AS SUBJECT
Entry Element
، Integrated circuits- Very large scale integration
Entry Element
، Silicon
Entry Element
، Gallium arsenide
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK
7874
.
G473
1994
OTHER CLASS NUMBERS
Class number
NO
PERSONAL NAME - PRIMARY RESPONSIBILITY
Entry Element
Ghandhi, Sorab K.
Relator Code
AU
TI
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