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Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
پدید آورنده
Adachi, Sadao
موضوع
Gallium arsenide semiconductors , Indium alloys , Indium phosphide
رده
QC
611
.
8
.
G3
A33
1992
کتابخانه
Central Library of Amirkabir University of Technology
محل استقرار
استان:
Tehran
ـ شهر:
Tehran
تماس با کتابخانه :
۶۶۴۰۷۴۱۸(۰۲۱) – ۶۴۵۴۲۳۴۹(۰۲۱)
CE E1 S1
TITLE AND STATEMENT OF RESPONSIBILITY
First Statement of Responsibility
Adachi, Sadao
Title Proper
Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
New York
Name of Publisher, Distributor, etc.
Wiley
Date of Publication, Distribution, etc.
1992
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xviii, 318 p. : ill
GENERAL NOTES
Text of Note
Includes bibliographical references and indexes
Text of Note
A Wiley Interscience publication
TOPICAL NAME USED AS SUBJECT
Entry Element
Gallium arsenide semiconductors
Entry Element
Indium alloys
Entry Element
Indium phosphide
LIBRARY OF CONGRESS CLASSIFICATION
Class number
QC
Book number
611
.
8
Classification Record Number
.
G3
A33
1992
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
AU
Dates
1950-
Entry Element
Sadao Adachi
LOCATION AND CALL NUMBER
Shelving Form of Title, Author, Author/Title
English
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