عنوان

Low-temperature oxidation of silicon using point-to-plane corona discharge

Number

TLpq303878556

.Language of Text, Soundtrack etc

انگلیسی

Title Proper

Low-temperature oxidation of silicon using point-to-plane corona discharge

General Material Designation

[Thesis]

First Statement of Responsibility

M. R. Madani

Subsequent Statement of Responsibility

P. K. Ajmera

Name of Publisher, Distributor, etc.

Louisiana State University and Agricultural & Mechanical College

Date of Publication, Distribution, etc.

1990

Specific Material Designation and Extent of Item

140

Dissertation or thesis details and type of degree

Ph.D.

Body granting the degree

Louisiana State University and Agricultural & Mechanical College

Text preceding or following the note

1990

Text of Note

A technique for low temperature oxidation of silicon in dry oxygen ambient at temperatures between 25C to 500C using negative point-to-plane corona discharge is developed. The oxidation rate is a strong function of temperature is found to increase significantly in comparison with the conventional thermal oxidation rate. For the thicker films, the refractive index of the grown oxide layer approaches the value obtained for high temperature thermally grown oxide. The effects of some independent process parameters such as time, temperature, and ion current on the oxidation of silicon are studied. The electrical quality of the grown oxide film is investigated. The C-V characteristic curves of the MOS capacitors of the oxide grown by this technique show shifts in the flat-band voltage. The shift of flat-band voltage is found to be a function of oxidation temperature and the corona current during the oxidation process. The leakage current of the capacitor fabricated negative and positive gate bias voltages. When the aluminum plate of the capacitor is biased negative with respect to the substrate, the measured value of the current is substantially higher than the measured current value under positive bias. The mechanism of the leakage current for the oxide grown at room temperature is studied. The interface trap density spectrum in the range of 5 usd\timesusd 10 to 5 usd\timesusd 10 cm (eV) is obtained for the oxide grown at 400C for one hour with 1 cm electrode distance at 1 atm pressure in dry oxygen ambient. The oxide film grown by this method has a potential for application in device fabrication technology. The application of the Nicollian and Reisman oxidation model indicates that the oxidation process at a given temperature under corona discharge is more strongly surface reaction controlled than thermal oxidation of silicon. The observed high rate of oxidation of silicon by corona discharge in a dry oxygen ambient may be associated with stress relief and an increase in the viscous flow of the grown SiO2 film during oxidation.

Applied sciences

Electrical engineering

Materials science

M. R. Madani

P. K. Ajmera

Electronic name

p

[Thesis]

276903

a

Y