عنوان
پدید آورنده
موضوع
رده
TK7874.75 .T78 2002eb
TK7874
.
75
.
T78
2002eb
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9789812381118
(Number (ISBN
9789812703842
(Number (ISBN
9812381112
(Number (ISBN
9812703845
Erroneous ISBN
9812381112
NATIONAL BIBLIOGRAPHY NUMBER
Number
b797902
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Mixed analog-digital VLSI devices and technology /
General Material Designation
[Book]
First Statement of Responsibility
Yannis Tsividis.
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
River Edge, N.J. :
Name of Publisher, Distributor, etc.
World Scientific,
Date of Publication, Distribution, etc.
©2002.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource (x, 284 pages) :
Other Physical Details
illustrations
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
CONTENTS NOTE
Text of Note
Preface; Chapter 1. Introduction: Mixed Analog-Digital Chips; 1.1 The Role and Place of Modern Mixed Analog-Digital Chips; 1.2 Advantages of Mixing Analog and Digital Circuits on the Same Chip; 1.3 Applications of MAD Chips; 1.4 Obstacles in the Design of MAD Chips; 1.5 The Aim and Contents of This Book; Chapter 2. The MOSFET: Introduction and Qualitative View; 2.1 Introduction; 2.2 MOS Transistor Structure; 2.3 Assumptions about Terminal Voltages Currents and Temperature; 2.4 A Qualitative Description of MOSFET Operation; 2.4.1 Effect of VGS: Level of Inversion.
Text of Note
2.4.2 Effect of VSB: The Body Effect2.4.3 Effect of VDS: Drain Current; 2.5 A Fluid Dynamical Analog; 2.6 Complete Set of Characteristics; 2.7 Form of Functional lD-VGS Dependence: Practical Limits for Regions of Inversion; 2.8 Factors Affecting the Extrapolated Threshold Voltage; 2.9 Other Factors Affecting the Drain Current; Chapter 3. MOSFET DC Modeling; 3.1 Introduction; 3.2 DC Model for Weak and for Strong Inversion; 3.2.1 The Current Equations; 3.2.2 Model Parameters Influenced by the Body Effect; 3.2.3 Origin and Validity of the Model; 3.3 Drain versus Source; 3.4 Symmetric Models.
Text of Note
3.5 General Models and Moderate Inversion3.6 Mobility Dependence on Gate and Substrate Bias; 3.7 Temperature Effects; 3.8 Small-Dimension Effects; 3.9 Breakdown; 3.10 The pMOS Transistor; 3.11 Device Symbols; 3.12 Model Accuracy Parameter Extraction and Computer Simulation; Chapter 4. MOSFET Small-Signal Modeling; 4.1 Introduction; 4.2 Small-Signal Conductance Parameters; 4.3 Expressions for Small-Signal Conductance Parameters in Weak and in Strong Inversion; 4.3.1 Gate Transconductance; 4.3.2 Body Transconductance; 4.3.3 Drain-Source Conductance; 4.3.4 Drain-Substrate Conductance.
Text of Note
4.3.5 Examples4.3.6 Small-Signal Parameters in the Presence of Second-Order Effects; 4.4 Capacitance Parameters; 4.4.1 Extrinsic Capacitances; 4.4.2 Intrinsic Capacitances in Weak and in Strong Inversion; 4.5 Intrinsic Cutoff Frequency and Limits of Model Validity; 4.6 The Transistor at Very High Frequencies; 4.6.1 Extrinsic Parasitic Resistances; 4.6.2 Intrinsic Nonquasi-static Effects; 4.7 Noise; 4.7.1 Introductory Remarks; 4.7.2 MOS Transistor Noise; 4.8 General Models and Moderate Inversion; 4.9 Parameter Extraction for Accurate Small-Signal Modeling; 4.10 Requirements for Good CAD Models.
Text of Note
Chapter 5. Technology and Available Circuit Components5.1 Introduction; 5.2 The n-Well CMOS Process; 5.2.1 Basic Fabrication Steps and MOS Transistor Structures; 5.2.2 Capacitors; 5.2.3 Resistors; 5.2.4 Inductors; 5.2.5 Bipolar Transistors; 5.2.6 Interconnects; 5.2.7 Electrical Parameters; 5.2.8 Input Protection; 5.2.9 Latch-up; 5.3 BiCMOS Processes; 5.3.1 Adding High-Performance Bipolar Transistors to CMOS; 5.3.2 Bipolar Transistor Models; 5.4 Other Silicon Processes; 5.5 Sensors; 5.6 Trimming; 5.7 Tolerance and Matching of Electrical Parameters; 5.8 Chip Size and Yield.
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SUMMARY OR ABSTRACT
Text of Note
Improve your circuit-design potential with this expert guide to the devices and technology used in mixed analog-digital VLSI chips for such high-volume applications as hard-disk drives, wireless telephones, and consumer electronics. The book provides you with a critical understanding of device models, fabrication technology, and layout as they apply to mixed analog-digital circuits. You will learn about the many device-modeling requirements for analog work, as well as the pitfalls in models used today for computer simulators such as Spice. Also included is information on fabrication technologi.
OTHER EDITION IN ANOTHER MEDIUM
Title
Mixed Analog-Digital Vlsi Devices and Technology.
International Standard Book Number
9789812381118
TOPICAL NAME USED AS SUBJECT
Integrated circuits-- Very large scale integration-- Design and construction.
Integrated circuits-- Very large scale integration-- Mathematical models.
Mixed signal circuits.
Integrated circuits-- Very large scale integration-- Design and construction.
Integrated circuits-- Very large scale integration-- Mathematical models.
Mixed signal circuits.
DEWEY DECIMAL CLASSIFICATION
Number
621
.
39/5
Edition
22
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK7874
.
75
Book number
.
T78
2002eb
PERSONAL NAME - PRIMARY RESPONSIBILITY
Tsividis, Yannis.
ORIGINATING SOURCE
Date of Transaction
20201207103344.0
Cataloguing Rules (Descriptive Conventions))
pn
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب [Book]
Y
