عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
NATIONAL BIBLIOGRAPHY NUMBER
Number
TL48036
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
High throughput manufacturing of silicon nanobridges for the fabrication of 3D gate-all-around field effect transistors
General Material Designation
[Thesis]
General Material Designation
[Thesis]
General Material Designation
[Thesis]
General Material Designation
[Thesis]
First Statement of Responsibility
Jin Yong Oh
Subsequent Statement of Responsibility
Islam, M. Saif
.PUBLICATION, DISTRIBUTION, ETC
Name of Publisher, Distributor, etc.
University of California, Davis
Date of Publication, Distribution, etc.
2014
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
178
GENERAL NOTES
Text of Note
Committee members: Amitharajah, Rajeevan; Horsley, David
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Place of publication: United States, Ann Arbor; ISBN=978-1-321-36357-9
DISSERTATION (THESIS) NOTE
Dissertation or thesis details and type of degree
Ph.D.
Discipline of degree
Electrical and Computer Engineering
Body granting the degree
University of California, Davis
Text preceding or following the note
2014
SUMMARY OR ABSTRACT
Text of Note
Self-assembled nanowires chemically synthesized by bottom-up approaches have attracted considerable attention due to their properties that are not common in their bulk or thin film counterparts. Their potential to offer novel functionality opens up opportunities for innovative genres of devices. Indeed, a number of innovative devices, such as transistors, diodes, bio/chemical sensors, photovoltaic devices, and even embryonic low-density integrated circuits, have been demonstrated by using various kinds of nanowires. In contrast to nanostructured materials created by the microfabrication technology pursued by the microelectronics industry, self-assembled nanowires inheritedly exhibit a high degree of variability in their dimensions, densities, locations, and alignment, etc. Despite the promise of nanowires, such uncertainty prevents them from utilization in mass-manufacturing processes and large-scale device integration.
TOPICAL NAME USED AS SUBJECT
Electrical engineering; Materials science
UNCONTROLLED SUBJECT TERMS
Subject Term
Applied sciences;Bottom-up;Field effect transistors;Nanobridges;Nanowires;Silicon nanostructures;Vapor-liquid-solid growth
PERSONAL NAME - PRIMARY RESPONSIBILITY
Neville-Shepard, Meredith Diane
PERSONAL NAME - SECONDARY RESPONSIBILITY
Islam, M. Saif
CORPORATE BODY NAME - SECONDARY RESPONSIBILITY
Subdivision
Electrical and Computer Engineering
University of California, Davis
LOCATION AND CALL NUMBER
Call Number
1639601029; 3646363
ELECTRONIC LOCATION AND ACCESS
Electronic name
مطالعه متن کتاب p
[Thesis]
276903
a
Y
