Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO :
General Material Designation
[Book]
Other Title Information
Application to Displays /
First Statement of Responsibility
Shunpei Yamazaki, Tetsuo Tsutsui
EDITION STATEMENT
Edition Statement
1st
Edition Statement
1st
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource (432 pages).
SERIES
Series Title
Wiley-SID Series in Display Technology
GENERAL NOTES
Text of Note
About the Editors Notes on contributors Series editor's foreword Preface Acknowledgements 1 Introduction 1.1 History of Displays 1.2 Requirement for Displays 1.3 Transistor Technology for Displays 1.3.1 Comparison of Silicon and Oxide Semiconductors 1.3.2 FETs in LCDs 1.3.3 FETs in OLED Displays 1.3.4 Recent CAAC-IGZO FET Technologies 1.3.5 Development of OLED Displays Using CAAC-IGZO 2 Applications of CAAC-IGZO FETs to Displays 2.1 Introduction 2.2 Bottom-gate Top-contact FET 2.2.1 Manufacturing Process for CAAC-IGZO FETs with Channel-etch Type of BGTC Structure 2.2.2 GI Formation 2.2.3 Formation of Buried Channel by Stacked Active Layer IGZO 2.2.4 Baking Treatment of CAAC-IGZO 2.2.5 Damaged Layer ( n -type) Formed by Deposition of S/D Electrodes 2.2.6 Cleaning of the Back Channel 2.2.7 Copper Wiring
Text of Note
and Color Filter (WTC) Structure to Displays 4.5.2 Performance of OLED and Liquid Crystal Displays 5 Flexible Displays 5.1 Introduction 5.1.1 OLED and Flexible Displays 5.2 Flexible Display Fabrication Technology 5.2.1 Separation Layer 5.2.2 Separation Process 5.2.3 Transfer Process of Flexible Displays 5.2.4 Moisture Blocking Property of the Flexible OLED Display 5.2.5 Bending Test 5.2.6 System Automation by Transfer Technology Apparatus (TT Apparatus) 5.3 Prototypes of Flexible OLED Displays 6 Application to Liquid Crystal Displays 6.1 Introduction 6.2 Technology for Higher Resolution 6.2.1 Introduction 6.2.2 The Pixel Circuit 6.2.3 Pixel Layout and Aperture Ratio of an LCD 6.2.4 Applicability of Large-sized Displays 6.3 Driving Method for Power Saving 6.3.1 Introduction 6.3.2 Saving Power with Low-frequency
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Conductor Electrode and Measurements of Its Resistivity 2.6.3 Liquid Crystal Display Device with Oxide Conductor Electrode 2.6.4 Summary 3 Driver Circuit 3.1 Introduction 3.2
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Driving 6.3.3 Low-frequency Driving with CAAC-IGZO 6.3.4 Configuration of a Liquid Crystal Cell for Low-frequency Driving 6.3.5 Conclusions 6.4 Characteristics of Liquid Crystal Displays 6.4.1 Introduction 6.4.2 High-Resolution Fringe-field Switching Liquid Crystal Displays 6.4.3 A 434-PPI Reflective Liquid Crystal Display Appendix Unit Prefix FET Symbol
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for S/D Electrodes 2.3 Top-gate Self-aligned FET 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs 2.3.2 Formation of GE/GI Patterns 2.3.3 Formation of S/D Regions 2.3.4 GI Thinning and L Reduction 2.4 Characteristics of CAAC-IGZO FET 2.4.1 Current Drivability 2.4.2 Low Off-state Current 2.4.3 Normally-off I d- V d Characteristics and Small Threshold-voltage Variation 2.4.4 Saturability of I d- V d Characteristics 2.4.5 Summary 2.5 Density of States and Device Reliability 2.5.1 Introduction 2.5.2 Measurement of Defect States in IGZO Film 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics 2.5.4 Defect States in Silicon Oxide Film 2.5.5 NBIS Mechanism 2.5.6 Summary 2.6 Oxide Conductor Electrode Process 2.6.1 Introduction 2.6.2 Method of Fabricating Oxide
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Top Emission, and Color Filter (WTC) Structure 4.3.3 Measures for Crosstalk 4.4 Circuit Design for OLED Displays 4.4.1 Driving OLED Displays 4.4.2 External Compensation 4.4.3 Internal Compensation 4.4.4 Arrangement of Pixel Circuit and High Resolution 4.5 Characteristics of OLED displays 4.5.1 Applications of White-tandem OLED, Top Emission,