عنوان
پدید آورنده
موضوع
رده
E-Book ,
E-Book
,
کتابخانه
محل استقرار
INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
:9789402408393
NATIONAL BIBLIOGRAPHY NUMBER
Number
23039
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Ferroelectric-Gate Field Effect Transistor Memories
General Material Designation
[electronic resources]
Other Title Information
: Device Physics and Applications
First Statement of Responsibility
\ [edited by] Byung-Eun Park...[et.al]
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Dordrecht
Name of Publisher, Distributor, etc.
: Springer
Date of Publication, Distribution, etc.
, 2016
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xviii, 347 p
Other Physical Details
:ill
SERIES
Series Title
Topics in Applied Physics
Volume Designation
; Volume 131
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Bibliography
TOPICAL NAME USED AS SUBJECT
Entry Element
Field-Effect Transistors
Entry Element
Ferroelectric thin films
Entry Element
ترانزیستورها با اثر میدان
Entry Element
فیلمهای نازک فرو الکتریکی
a03
a04
a03
a04
LIBRARY OF CONGRESS CLASSIFICATION
E-Book
,
PERSONAL NAME - ALTERNATIVE RESPONSIBILITY
Park, Byung-eun
ORIGINATING SOURCE
Country
ایران
ELECTRONIC LOCATION AND ACCESS
Date and Hour of Consultation and Access
9789402408393.pdf
p
BL
279177
1
a
N
