عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
TLpq2408868011
انگلیسی
High Performance Metal Oxide Thin Film Transistors via Cluster Control and Interface Engineering
[Thesis]
Wang, Zhengxu
Yang, Yang
University of California, Los Angeles
2020
117
Ph.D.
University of California, Los Angeles
2020
Around 100 years has passed since the first cathode ray tube has been fabricated. Fast and free transition of graphs provided much convenience for human communication. Generations of display were developed and flat panel display (FPD) techniques are developing tremendously recently. Various demands are raised including high definition, large area, flexibility, etc. Backplane need improving to meet these, especially the thin film transistor (TFT) units. High mobility, easy process and good interfaces are desired. Solution processed amorphous InGaZnO proves a competitive candidate for TFT semiconductor materials. Its electronic performance, uniformity and switching properties turned out among the best. However, problems remain to be solved including mechanism interpretation, precursor control, morphology and interface. Chapter 1 will introduce the history and state of art of TFT in more details.
Cluster control
IGZO
Interface engineering
Materials science
Solution process
TFT
Wang, Zhengxu
Yang, Yang
مطالعه متن کتاب p
[Thesis]
276903
a
Y
