عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
TL48036
انگلیسی
High throughput manufacturing of silicon nanobridges for the fabrication of 3D gate-all-around field effect transistors
[Thesis]
Jin Yong Oh
Islam, M. Saif
University of California, Davis
2014
178
Committee members: Amitharajah, Rajeevan; Horsley, David
Place of publication: United States, Ann Arbor; ISBN=978-1-321-36357-9
Ph.D.
Electrical and Computer Engineering
University of California, Davis
2014
Self-assembled nanowires chemically synthesized by bottom-up approaches have attracted considerable attention due to their properties that are not common in their bulk or thin film counterparts. Their potential to offer novel functionality opens up opportunities for innovative genres of devices. Indeed, a number of innovative devices, such as transistors, diodes, bio/chemical sensors, photovoltaic devices, and even embryonic low-density integrated circuits, have been demonstrated by using various kinds of nanowires. In contrast to nanostructured materials created by the microfabrication technology pursued by the microelectronics industry, self-assembled nanowires inheritedly exhibit a high degree of variability in their dimensions, densities, locations, and alignment, etc. Despite the promise of nanowires, such uncertainty prevents them from utilization in mass-manufacturing processes and large-scale device integration.
Electrical engineering; Materials science
Applied sciences;Bottom-up;Field effect transistors;Nanobridges;Nanowires;Silicon nanostructures;Vapor-liquid-solid growth
Neville-Shepard, Meredith Diane
Islam, M. Saif
Electrical and Computer Engineering
University of California, Davis
1639601029; 3646363
مطالعه متن کتاب p
[Thesis]
276903
a
Y
