عنوان

Stochastic process variation in deep-submicron CMOS

شابک

9789400777804

کد کشور

IR

شماره

EN-57547

زبان متن نوشتاري يا گفتاري و مانند آن

انگلیسی

کشور محل نشر

IR

عنوان اصلي

Stochastic process variation in deep-submicron CMOS

نام عام مواد

[Book]

ساير اطلاعات عنواني

:circuits and algorithms

نام نخستين پديدآور

/ Amir Zjajo

محل نشرو پخش و غیره

Dordrecht

نام ناشر، پخش کننده و غيره

: Springer,

تاریخ نشرو بخش و غیره

, 2014.

عنوان فروست

(Springer series in advanced microelectronics

مشخصه جلد

; v.48)

متن يادداشت

Electronic

متن يادداشت

Includes bibliographical references and index..

متن يادداشت

Summary: One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.

متن يادداشت

Random Process Variation in Deep-Submicron CMOS -- Electronic Noise in Deep-Submicron CMOS -- Temperature Effects in Deep-Submicron CMOS -- Circuit Solutions -- Conclusions and Recommendations.

عنوان

Springer series in advanced microelectronics

شماره جلد

v.48

موضوع مستند نشده

Metal oxide semiconductors, Complementary, Mathematical models

موضوع مستند نشده

Stochastic processes

موضوع مستند نشده

Physics

موضوع مستند نشده

Electronic Circuits and Devices

موضوع مستند نشده

Circuits and Systems

موضوع مستند نشده

Statistical Physics, Dynamical Systems and Complexity

موضوع مستند نشده

Appl.Mathematics/Computational Methods of Engineering

موضوع مستند نشده

Physiological, Cellular and Medical Topics

موضوع مستند نشده

TECHNOLOGY & ENGINEERING / Mechanical, bisacsh

شماره رده

مستند نام اشخاص تاييد نشده

Zjajo, Amir

کشور

ایران

نام ميزبان

9789400777804.pdf

شماره دسترسي

عادی

اطلاعات مختصر

عادی

تاريخ و ساعت مذاکره و دسترسي

9789400777804.pdf

نوع فرمت الکترونيکي

متن

وضعیت فهرست نویسی

old catalog

فرمت انتشار

e

نوع ماده

BL

پیشوند ISBD اعمال شده است

1

سطح دسترسي

a

تكميل شده

Y