عنوان

Simulation and modeling of the structure and surface profile of sputtered refractory films for VLSI barriers

شماره

TLpq304421397

زبان متن نوشتاري يا گفتاري و مانند آن

انگلیسی

عنوان اصلي

Simulation and modeling of the structure and surface profile of sputtered refractory films for VLSI barriers

نام عام مواد

[Thesis]

نام نخستين پديدآور

M. Salahuddin

نام ساير پديدآوران

T. Smy

نام ناشر، پخش کننده و غيره

Carleton University (Canada)

تاریخ نشرو بخش و غیره

1998

نام خاص و کميت اثر

88

جزئيات پايان نامه و نوع درجه آن

M.Eng.

کسي که مدرک را اعطا کرده

Carleton University (Canada)

امتياز متن

1998

متن يادداشت

This thesis will present a new model for sputtered thin film growth of refractory metals based upon the atomic momentum of sputtered particles arriving at the substrate. The new model is incorporated into the original SIMBAD application to simulate certain phenomena of thin film growth that were previously not addressed. Experimental metal films were sputtered on trenches/vias to a thickness of 1mum. Tungsten was the primary metal used for most of the experiments. Analysis of metal films showed that lateral growth at the corners of the trenches/vias constantly exceeded simulation results obtained using previous SIMBAD models. The modified model takes into account motion of sputtered atoms due to their momentum after reaching the growing thin film surface. The new SIMBAD algorithm successfully produces thin films that closely depict experimental results including lateral growth features. A number of films were simulated using different conditions with the modified SIMBAD model to show the universality of the lateral growth phenomenon.

موضوع مستند نشده

Applied sciences

موضوع مستند نشده

Electrical engineering

مستند نام اشخاص تاييد نشده

M. Salahuddin

مستند نام اشخاص تاييد نشده

T. Smy

نام الکترونيکي

فرمت انتشار

p

نوع ماده

[Thesis]

کد کاربرگه

276903

سطح دسترسي

a

تكميل شده

Y