عنوان

Analysis of new deep submicrometer metal-oxide-semiconductor device structures

شماره

TLpq303981442

زبان متن نوشتاري يا گفتاري و مانند آن

انگلیسی

عنوان اصلي

Analysis of new deep submicrometer metal-oxide-semiconductor device structures

نام عام مواد

[Thesis]

نام نخستين پديدآور

M. A. Khan

نام ناشر، پخش کننده و غيره

Arizona State University

تاریخ نشرو بخش و غیره

1992

نام خاص و کميت اثر

164

جزئيات پايان نامه و نوع درجه آن

Ph.D.

کسي که مدرک را اعطا کرده

Arizona State University

امتياز متن

1992

متن يادداشت

The behavior of four deep sub-micron n-channel metal oxide semiconductor (n-MOS) structures are described and detailed in this dissertation. The oxide thickness is selected as 10 nanometer and the effective physical channel length is approximately 0.12 mum. The physical and electrical characteristics of these devices are simulated on the device simulation program PISCES. One of the devices simulated has a very thin layer of tungsten as the gate electrode. The Tungsten layer extends under the side wall spacers, giving the cross section of the gate the appearance of an inverted letter 'T'. The electrical characteristics of the inverse-T tungsten gate (ITTG) device are compared to those of the inverse-T poly gate (ITPG) device and the Short Poly Gate (SPG) device. It is shown that the ITTG has higher transconductance (gm) and larger drain saturation current, compared with those parameters for the ITPG and SPG. The device structures utilize a punch-through implant to prevent punch-through break-down. The simulation results show that the ITTG has a reduced vertical electric field, thus higher oxide breakdown voltage. The ITTG structures also have lower subthreshold voltage swing and smaller leakage currents due to drain induced barrier lowering. The simulation results also show that the ITTG device has a lateral electric field less than 5.5 usd\timesusd 10 V/cm for reliable device operation. By comparing results, it is observed that the use of the Tungsten gate electrode as the inverse-T gate cross section results in devices with excellent performance and improved electrical characteristics. Hence, the ITTG structures offer highly reliable and small size devices which are most suitable for modern, high performance, high density digital circuit applications.

موضوع مستند نشده

Applied sciences

موضوع مستند نشده

Electrical engineering

موضوع مستند نشده

Electrical engineering

موضوع مستند نشده

Electromagnetism

موضوع مستند نشده

metal oxide semiconductor

موضوع مستند نشده

Pure sciences

مستند نام اشخاص تاييد نشده

M. A. Khan

نام الکترونيکي

فرمت انتشار

p

نوع ماده

[Thesis]

کد کاربرگه

276903

سطح دسترسي

a

تكميل شده

Y