عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
شماره کتابشناسی ملی
شماره
TLpq1748051043
زبان اثر
زبان متن نوشتاري يا گفتاري و مانند آن
انگلیسی
عنوان و نام پديدآور
عنوان اصلي
A statistical approach for optimizing parameters for electrodeposition of indium (III) sulfide (In2S3) films, potential low-hazard buffer layers for photovoltaic applications
نام عام مواد
[Thesis]
نام نخستين پديدآور
M. A. Mughal
نام ساير پديدآوران
R. Engelken
وضعیت نشر و پخش و غیره
نام ناشر، پخش کننده و غيره
Arkansas State University
تاریخ نشرو بخش و غیره
2015
مشخصات ظاهری
نام خاص و کميت اثر
150
یادداشتهای مربوط به پایان نامه ها
جزئيات پايان نامه و نوع درجه آن
Ph.D.
کسي که مدرک را اعطا کرده
Arkansas State University
امتياز متن
2015
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
Clean and environmentally friendly technologies are centralizing industry focus towards obtaining long term solutions to many large-scale problems such as energy demand, pollution, and environmental safety. Thin film solar cell (TFSC) technology has emerged as an impressive photovoltaic (PV) technology to create clean energy from fast production lines with capabilities to reduce material usage and energy required to manufacture large area panels, hence, lowering the costs. Today, cost (usd/kWh) and toxicity are the primary challenges for all PV technologies. In that respect, electrodeposited indium sulfide (In2S3) films are proposed as an alternate to hazardous cadmium sulfide (CdS) films, commonly used as buffer layers in solar cells. This dissertation focuses upon the optimization of electrodeposition parameters to synthesize In2S3 films of PV quality. The work describe herein has the potential to reduce the hazardous impact of cadmium (Cd) upon the environment, while reducing the manufacturing cost of TFSCs through efficient utilization of materials. Optimization was performed through use of a statistical approach to study the effect of varying electrodeposition parameters upon the properties of the films. A robust design method referred-to as the "Taguchi Method" helped in engineering the properties of the films, and improved the PV characteristics including optical bandgap, absorption coefficient, stoichiometry, morphology, crystalline structure, thickness, etc. Current density (also a function of deposition voltage) had the most significant impact upon the stoichiometry and morphology of In2S3 films, whereas, deposition temperature and composition of the solution had the least significant impact. The dissertation discusses the film growth mechanism and provides understanding of the regions of low quality (for example, cracks) in films. In2S3 films were systematically and quantitatively investigated by varying electrodeposition parameters including bath composition, current density, deposition time and temperature, stir rate, and electrode potential. These parameters individually and collectively exhibited significant correlation with the properties of the films. Digital imaging analysis (using fracture and buckling analysis software) of scanning electron microscope (SEM) images helped to quantify the cracks and study the defects in films. In addition, the effects of different annealing treatments (200 oC, 300 oC, and 400 oC in air) and coated-glass substrates (Mo, ITO, FTO) upon the properties of the In2S3 films were analyzed.
موضوع (اسم عام یاعبارت اسمی عام)
موضوع مستند نشده
Applied sciences
موضوع مستند نشده
Electrodeposition
موضوع مستند نشده
Semiconductors
موضوع مستند نشده
Solar cell
موضوع مستند نشده
Taguchi method
موضوع مستند نشده
Thin film
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )
مستند نام اشخاص تاييد نشده
M. A. Mughal
مستند نام اشخاص تاييد نشده
R. Engelken
دسترسی و محل الکترونیکی
نام الکترونيکي
مطالعه متن کتاب وضعیت انتشار
فرمت انتشار
p
اطلاعات رکورد کتابشناسی
نوع ماده
[Thesis]
کد کاربرگه
276903
اطلاعات دسترسی رکورد
سطح دسترسي
a
تكميل شده
Y
