عنوان

The Cleaning and Passivation of Germanium X-Ray Photodiodes

شماره

TL54481

زبان متن نوشتاري يا گفتاري و مانند آن

انگلیسی

عنوان اصلي

The Cleaning and Passivation of Germanium X-Ray Photodiodes

نام عام مواد

[Thesis]

نام نخستين پديدآور

Garafalo, Anne

نام ساير پديدآوران

Hunt, Charles E.

نام ناشر، پخش کننده و غيره

University of California, Davis

تاریخ نشرو بخش و غیره

2020

متن يادداشت

51 p.

جزئيات پايان نامه و نوع درجه آن

M.S.

کسي که مدرک را اعطا کرده

University of California, Davis

امتياز متن

2020

متن يادداشت

For high performance Ge x-ray photodiodes, it is vital that the quality Ge interfacial layer is examined, as the type of layer, cleaning method, and deposition method used have a large impact on the performance of the devices. In this study Ge surfaces and mesas were cleaned with UV Ozone, thermal annealing, and cyclic HCl etches. Next Hf3N4 was deposited using atomic layer deposition, onto the surfaces of Ge photodiodes and MIS capacitors to form the passivation layers and compared to polyimide passivated photodiodes. AFM measurements allow for comparing the RMS roughness of the germanium surfaces with different cleaning methods. XPS measurements indicate which cleaning methods are most effective at removing germanium oxides and organic species from the surface. Taking voltage versus current measurements allow for comparing the dark current, breakdown voltage and ideality factor of a Hf3N4 passivated germanium photodiode with a polyimide passivated germanium photodiode. The interface trap density is calculated from the conductance method by measuring the capacitance versus voltage of Hf3N4 passivated germanium MIS capacitors.

اصطلاح موضوعی

Electrical engineering

اصطلاح موضوعی

Materials science

مستند نام اشخاص تاييد نشده

Garafalo, Anne

مستند نام اشخاص تاييد نشده

Hunt, Charles E.

مستند نام تنالگان تاييد نشده

University of California, Davis

نام الکترونيکي

فرمت انتشار

p

نوع ماده

[Thesis]

کد کاربرگه

276903

سطح دسترسي

a

تكميل شده

Y