عنوان

Simulation von Bauteilen für integrierte photonische Silizium-Schaltungen

شماره

TL50443

زبان متن نوشتاري يا گفتاري و مانند آن

انگلیسی

عنوان اصلي

Simulation von Bauteilen für integrierte photonische Silizium-Schaltungen

نام عام مواد

[Thesis]

نام نخستين پديدآور

Atif, Muhammad

نام ساير پديدآوران

Woggon, Ulrike

نام ناشر، پخش کننده و غيره

Technische Universitaet Berlin (Germany)

تاریخ نشرو بخش و غیره

2019

متن يادداشت

136 p.

جزئيات پايان نامه و نوع درجه آن

Ph.D.

کسي که مدرک را اعطا کرده

Technische Universitaet Berlin (Germany)

امتياز متن

2019

متن يادداشت

This study focusses upon simulation of building blocks for silicon photonic integrated circuits. The two necessary steps for the simulation are control of temperature in the integrated Mach-Zehnder Interferometer (MZI) or modulators (MZM), and stabilization and tuning of optical modulated spectrum in node-matched-diode (NMD) Fabry-Pérot (FP) resonator or modulators. Hence the thesis consists of two parts. The first part of this work deals with the control of temperature in the integrated Mach-Zehnder interferometer (MZI) or modulators (MZM). The thermodynamic model for lattice temperature or heat equation, Shockley-Read-Hall Recombination doping and temperature dependence, and mobility models have been used for thermal simulation in Synopsys Sentaurus device tool. These models were used to calculate the average temperature, electric field strength, charge carrier current density, mobility of carriers, and number of charge carriers per unit volume in different components of heaters and modulators. It is through these models that the Poisson, temperature, and continuity equations were solved. The complete analysis of above quantities and refractive index change in waveguide were computed from Sentaurus visual simulator tools. The steady state thermal simulation of Si- and aluminum heaters in Mach-Zehnder interferometer (MZI) or modulator (MZM) were conducted using Sentaurus TCAD software. The comparison of Si- and aluminum heaters in MZI or MZM thermal simulation analysis reveals that the value of current density of Si-heaters in waveguide 3.95 x 10^(-9) A/µm^2 are greater as compared to aluminum heater 1.8 x 10^(-9) A/µm^2 . But these low values of carrier's current density do not affect the optical properties of MZI or MZM. Moreover, it was found that integrated Si-heaters (3.47 K/mW) are more thermally efficient than aluminum heaters (2.79 K/mW). It was computed that the refractive index changes per heater power of n-doped heater 6.42 x 10^(-4) (1/mW) is higher as compared to metal heater 5.2 x 10^(-4) (1/mW). These heaters are also used as thermo-optic phase shifter. The power for π-radian phase shift of thermo-optic phase shifter of simulated and measurement results have been verified. It was shown that low power (P_π) 26.42 mW and 24.07 mW for the simulated and real thermo-optic phase shifter to operate the signal in the operating range is required respectively. Furthermore, the high phase-shifting efficiency of simulated 26.42 ( mW)/π and real 24.07 mW/π phase shifter was determined. Consequently, simulated values of phase shifters were in a very good in agreement with experimental results. The silicon integrated heaters can be used in MZI or MZM due to their overall low temperature, uniform heating, high thermal efficiency, low current density in waveguide, low power consumption and high refractive index change per milliwatt power. Hence, highly efficient novel silicon heaters are appropriate to stabilize the optical spectrum and control the temperature in Mach-Zehnder Interferometer or Mach-Zehnder modulators. The second part deals with the stabilization and tuning of optical modulated spectrum in node-matched-diode (NMD) Fabry-Pérot (FP) resonator or modulators. These models were used as in the previous application of MZI. The steady state thermal simulation of aluminum and novel n-doped L- and U-shaped heaters were conducted in NMD FP-modulator using Synopsys Sentaurus software. It was computed that the thermal efficiency of n-doped silicon heaters 0.67 K/mW was high as compared to metal heaters 0.65 K/mW in NMD FP-modulator. It was shown that Si-heaters have high tuning efficiency 0.062 nm/mW as compared to metal heaters 0.060 nm/mW. The n-doped heaters tune the optical spectrum 3.4 nm to red-shift due to thermo-optic effect (TOE). Then the refractive index change of waveguide was computed in switch-on state of NMD. The influence on wavelength shift due to carrier plasma dispersion effect (PDE) and TOE was determined. The net wavelength shift amount to be 8.06 nm to blue-shift. In the third part, the combined thermal effects of NMD and Si-heaters have been computed. The silicon heaters use TOE and moves the spectrum to red-shift 3.8 nm. However, net wavelength shift is 4.26 nm in blue shift. The plasma dispersion effect dominates the thermo-optic effect. The trade-off spectrum due to switched-on state of NMD and Si-heaters was determined. In the end the simulated and estimated measurement results of Si- and aluminum heaters are verified. Hence it was proved that high thermal and tuning efficiency of n-doped heaters produce less temperature in the chip, generate uniform temperature in resonator and consume less power. The n-doped L- and U- shaped Si-heaters are appropriate to tune the spectrum in operating range in NMD FP-modulator.

اصطلاح موضوعی

Electrical engineering

اصطلاح موضوعی

Thermodynamics

مستند نام اشخاص تاييد نشده

Atif, Muhammad

مستند نام اشخاص تاييد نشده

Woggon, Ulrike

مستند نام تنالگان تاييد نشده

Technische Universitaet Berlin (Germany)

نام الکترونيکي

فرمت انتشار

p

نوع ماده

[Thesis]

کد کاربرگه

276903

سطح دسترسي

a

تكميل شده

Y