عنوان

Epitaxial growth of III-nitride compounds :

شابک

3319766414

شابک

9783319766416

شابک اشتباه

3319766406

شابک اشتباه

9783319766409

عنوان اصلي

Epitaxial growth of III-nitride compounds :

نام عام مواد

[Book]

ساير اطلاعات عنواني

computational approach /

نام نخستين پديدآور

Takashi Matsuoka, Yoshihiro Kangawa, editors.

محل نشرو پخش و غیره

Cham, Switzerland :

نام ناشر، پخش کننده و غيره

Springer,

تاریخ نشرو بخش و غیره

[2018]

تاریخ نشرو بخش و غیره

©2018

نام خاص و کميت اثر

1 online resource

عنوان فروست

Springer series in materials science ;

مشخصه جلد

Volume 269

متن يادداشت

Includes bibliographical references and index.

متن يادداشت

Intro; Preface; Contents; Contributors; 1 Introduction; 1.1 Purpose of the Book; 1.2 Outline of the Book; References; Fundamentals of Computational Approach to Epitaxial Growth of III-Nitride Compounds; 2 Computational Methods; 2.1 Ab Initio Calculations; 2.1.1 Density-Functional Theory; 2.1.2 Plane-Wave Basis Set; 2.1.3 Ab Initio Pseudopotential Method; 2.2 Empirical Interatomic Potentials; 2.3 Monte Carlo Simulations; References; 3 Fundamental Properties of III-Nitride Compounds; 3.1 Crystal Structure and Structural Stability; 3.2 Electronic Band Structure.

متن يادداشت

3.3 Miscibility of III-Nitride Alloy Semiconductors3.4 Dislocation Core Structures; 3.5 Compositional Inhomogeneity Around Threading Dislocations; References; 4 Fundamental Properties of III-Nitride Surfaces; 4.1 Surface Phase Diagram Calculations; 4.2 Surface Reconstructions on III-Nitride Compounds; 4.2.1 Polar AlN\left({0001} \right) and \left({000\bar{1}} \right) Surfaces; 4.2.2 Nonpolar AlN\left({1\bar{1}00} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.3 Semipolar AlN\left({1\bar{1}01} \right) and \left({11\bar{2}0} \right) Surfaces.

متن يادداشت

4.2.4 Polar GaN\left({0001} \right) and \left({000\bar{1}} \right) Surfaces4.2.5 Nonpolar GaN\left({1\bar{1}00} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.6 Semipolar GaN\left({1\bar{1}01} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.7 Polar InN\left({0001} \right) and \left({000\bar{1}} \right) Surfaces; 4.2.8 Nonpolar InN\left({1\bar{1}00} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.9 Semipolar InN\left({1\bar{1}01} \right) and \left({11\bar{2}0} \right) Surfaces; 4.3 Hydrogen Adsorption on III-Nitride Compounds.

متن يادداشت

4.3.1 Structures of AlN Surfaces with Hydrogen4.3.2 Surface Phase Diagrams for Hydrogen Adsorption on AlN Surfaces; 4.3.3 Structures of GaN Surfaces with Hydrogen; 4.3.4 Surface Phase Diagrams for Hydrogen Adsorption on GaN Surfaces; 4.3.5 Structures of InN Surfaces with Hydrogen; 4.3.6 Surface Phase Diagrams for Hydrogen Adsorption on InN Surfaces; References; Applications of Computational Approach to Epitaxial Growth of III-Nitride Compounds; 5 Thermodynamic Approach to InN Epitaxy; 5.1 Thermodynamic Approach; 5.1.1 Modeling InN MOVPE; 5.1.2 Surface Energy Calculation.

متن يادداشت

5.2 Surface Phase Diagram of InN Under MOVPE Condition5.3 Growth of InN by Pressurized-Reactor MOVPE; References; 6 Atomic Arrangement and In Composition in InGaN Quantum Wells; 6.1 Atomic Arrangement in InGaN; 6.1.1 Stability of Tetrahedral Clusters; 6.1.2 Monte Carlo Simulation of InGaN MOVPE; 6.2 In Incorporation in InGaN QWs; 6.2.1 Effective Enthalpy of Mixing of Coherently Grown InGaN Layers; 6.2.2 Thermodynamic Analysis of InGaN Hetero-Epitaxy; References; 7 Initial Epitaxial Growth Processes of III-Nitride Compounds; 7.1 Adatom Kinetics on AlN Polar Surfaces During MOVPE.

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8

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8

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8

متن يادداشت

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

منبع سفارش / آدرس اشتراک

Springer Nature

شماره انبار

com.springer.onix.9783319766416

عنوان

Epitaxial growth of III-nitride compounds.

شماره استاندارد بين المللي کتاب و موسيقي

9783319766409

موضوع مستند نشده

Epitaxy.

موضوع مستند نشده

Nitrides.

موضوع مستند نشده

Condensed matter physics (liquid state & solid state physics)

موضوع مستند نشده

Electronic devices & materials.

موضوع مستند نشده

Epitaxy.

موضوع مستند نشده

Materials science.

موضوع مستند نشده

Mathematical physics.

موضوع مستند نشده

Nitrides.

موضوع مستند نشده

Semi-conductors & super-conductors.

موضوع مستند نشده

TECHNOLOGY & ENGINEERING-- Mechanical.

موضوع مستند نشده

TEC-- 009070

موضوع مستند نشده

TJFD

شماره

ويراست

شماره رده

مستند نام اشخاص تاييد نشده

Kangawa, Yoshihiro

مستند نام اشخاص تاييد نشده

Matsuoka, Takashi,1947-

تاريخ عمليات

20200823111220.0

قواعد فهرست نويسي ( بخش توصيفي )

pn

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y