Engineering model of III-nitride power heterostructure field effect transistor on silicon substrate
نام عام مواد
[Thesis]
نام نخستين پديدآور
Mohammad Mirwazul Islam
نام ساير پديدآوران
Simin, Grigory
وضعیت نشر و پخش و غیره
نام ناشر، پخش کننده و غيره
University of South Carolina
تاریخ نشرو بخش و غیره
2016
مشخصات ظاهری
نام خاص و کميت اثر
97
يادداشت کلی
متن يادداشت
Committee members: Chandrashekhar, MVS; Khan, Jamil A.; Wang, Guoan
یادداشتهای مربوط به نشر، بخش و غیره
متن يادداشت
Place of publication: United States, Ann Arbor; ISBN=978-1-369-56508-9
یادداشتهای مربوط به پایان نامه ها
جزئيات پايان نامه و نوع درجه آن
Ph.D.
نظم درجات
Electrical Engineering
کسي که مدرک را اعطا کرده
University of South Carolina
امتياز متن
2016
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
In modern society, the demand for power consumption is increasing rapidly and the need of energy savings is now an issue of global importance. Highly efficient power converters and power conditioning systems operating with wide range of traditional as well as novel renewable and clean energy sources, are playing crucial role in energy saving. Si converters have already reached their limitation in terms of switching frequency and breakdown voltage/on-resistance ratio. Research is going on all around the world and it is now well accepted that significant improvement in power conversion efficiency and speed can only be achieved using beyond Si devices, such as SiC and GaN based. GaN based converters have shown great promises for higher conversion efficiency and switching speed. It is now crucial to develop accurate models that can assist in design and fabrication of GaN based power electronics.