عنوان

Applications of Liquid Phase Epitaxy in Optoelectronic Devices

شماره

TL49055

زبان متن نوشتاري يا گفتاري و مانند آن

انگلیسی

عنوان اصلي

Applications of Liquid Phase Epitaxy in Optoelectronic Devices

نام عام مواد

[Thesis]

نام نخستين پديدآور

Xin Zhao

نام ساير پديدآوران

Woodall, Jerry M.

نام ناشر، پخش کننده و غيره

University of California, Davis

تاریخ نشرو بخش و غیره

2016

نام خاص و کميت اثر

89

متن يادداشت

Committee members: Hihath, Joshua; Islam, M. Saif

متن يادداشت

Place of publication: United States, Ann Arbor; ISBN=978-1-369-20229-8

جزئيات پايان نامه و نوع درجه آن

Ph.D.

نظم درجات

Electrical and Computer Engineering

کسي که مدرک را اعطا کرده

University of California, Davis

امتياز متن

2016

متن يادداشت

Liquid phase epitaxy is a technique to grow high purity semiconductor crystals from a melt. This work explored applications of liquid phase epitaxy in two optical devices - solar cells and light emitting diodes. For the solar cell application, liquid phase epitaxy was used to optimize the efficiency of Al_0.2Ga_0.8As solar cells. Al_0.2Ga _0.8As is the preferred material for the top sub-cell of a dual-junction solar cell based on an efficient crystalline silicon bottom sub-cell. Preliminary studies of Al_0.2Ga_0.8As epilayers grown by liquid phase epitaxy, including photo-luminescent and Hall effect studies, indicated that the material was of high quality in terms of both carrier lifetimes and mobility. Then three approaches of growing AlGaAs solar cells on GaAs substrates were experimented, among which an approach was identified as being suitable for producing efficient AlGaAs solar cells. The approach involves growing an n-type AlGaAs base first, followed by an isothermal Zn diffusion process to form the p-type AlGaAs emitter and the window layer. The approach also requires that the substrate be always protected by a thin layer of residual melt throughout the growth to prevent interface or surface oxidation, and that the window layer be subsequently removed by buffer oxide etch solution. An open-circuit voltage of 1.15 V and an efficiency of 6.56% was observed from our cell without anti-reflective coatings. For the light emitting diode application, liquid phase epitaxy was used to grow lattice-mismatched GaInP epilayers on GaP substrates. Layered growth of Ga_xIn_1-xP on GaP was achieved when the lattice mismatch exceeds 0.4% (x<0.95) using a Sn-based melt. Compositional control was observed by (1) changing the cooling rate and (2) varying the melt-back temperature at the beginning of the growth.

موضوع مستند نشده

Electrical engineering

اصطلاح موضوعی

Applied sciences;AlGaAs solar cells;Liquid phase epitaxy;Optoelectronic devices

مستند نام اشخاص تاييد نشده

Islam, A.S.M. Faridul

مستند نام اشخاص تاييد نشده

Woodall, Jerry M.

تقسيم فرعي

Electrical and Computer Engineering

مستند نام تنالگان تاييد نشده

University of California, Davis

شماره بازیابی

1845292203; 10165853

نام الکترونيکي

فرمت انتشار

p

نوع ماده

[Thesis]

کد کاربرگه

276903

سطح دسترسي

a

تكميل شده

Y