عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
شابک
شابک
9533070315
شابک
9789533070315
شماره کتابشناسی ملی
شماره
b610751
عنوان و نام پديدآور
عنوان اصلي
Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime:
نام عام مواد
[Book]
ساير اطلاعات عنواني
Device Reliability, Experimental Feasibility and Photo-sensitivity.
نام نخستين پديدآور
Moumita Mukherjee
وضعیت نشر و پخش و غیره
نام ناشر، پخش کننده و غيره
INTECH Open Access Publisher
تاریخ نشرو بخش و غیره
2010
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
The prospects of WBG Wz-GaN and SiC (4H- and 6H- ) based IMPATT devices of different structures and doping profiles were thoroughly examined both in the MM-wave and submillimeter wave (THz) region. The study established the potential of these WBG semiconductors in fabricating high-power and high-frequency IMPATT devices, in MMwave as well as THz region. Si- based devices were also examined in these two regimes. The results showed that GaN and SiC based devices had superior performance over InP, in THz regime. A comparison of device properties of the 4H and 6H-SiC IMPATTs, revealed that the former is superior in terms of efficiency, output power generation capabilities and high temperature operation. Studies were also carried out on effects of parasitic series resistance and optical illumination effects due to photo-generated carriers in the designed TM and FC diodes. The effects of optical illumination on the different semiconductor (4H- and 6H- SiC, Wz-GaN) based diodes were examined for the two different illumination configurations: TM and FC. The results indicated that device negative resistance and Q-factor degraded, resulting in decrease of power density, along with an up-shift in the frequency of operation, due to the variation of incident illumination intensity. Moreover, it was observed that the predominant hole photo-current in FC illumination configuration, had more pronounced effect in modulating the high-frequency properties of illuminated SiC and GaN devices, while illuminated Si IMPATT showed opposite behavior. There is no doubt that, with the continuing progress in MM-wave and THz-device technology, the predictive simulation and proposed experimental feasibility of WBG semiconductor based IMPATT devices will become increasingly important for the success of research in modern high-power electronics.
موضوع (اسم عام یاعبارت اسمی عام)
موضوع مستند نشده
Open Access Collection.
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )
مستند نام اشخاص تاييد نشده
Moumita Mukherjee
نام شخص - (مسئولیت معنوی برابر )
مستند نام اشخاص تاييد نشده
Moumita Mukherjee
دسترسی و محل الکترونیکی
نام الکترونيکي
مطالعه متن کتاب اطلاعات رکورد کتابشناسی
نوع ماده
[Book]
اطلاعات دسترسی رکورد
تكميل شده
Y
