This chapter makes a brief introduction of the GaN-HEMT technological process development. Based on this technology, it is established a design procedure for broadband high power amplifiers. The design is focused on the synthesis of the matching and stabilization networks of a two-stage amplifier. It is highlighted the need for nonlinear stability analysis to avoid parametric and odd-mode oscillation. Thermal characterization is also critical due to the high power dissipated in high power GaN devices. Finally, we present the analysis of results of two broadband HPA demonstrators.
موضوع (اسم عام یاعبارت اسمی عام)
موضوع مستند نشده
Open Access Collection.
رده بندی کنگره
شماره رده
TN454
نشانه اثر
.
M375
2010
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )