عنوان
پدید آورنده
موضوع
رده
کتابخانه
محل استقرار
شابک
شابک
9401041512
شابک
9401103410
شابک
9789401041515
شابک
9789401103411
شماره کتابشناسی ملی
شماره
b594643
عنوان و نام پديدآور
عنوان اصلي
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates
نام عام مواد
[Book]
نام نخستين پديدآور
edited by Karl Eberl, Pierre M. Petroff, Piet Demeester.
وضعیت نشر و پخش و غیره
محل نشرو پخش و غیره
Dordrecht
نام ناشر، پخش کننده و غيره
Springer Netherlands : Imprint : Springer
تاریخ نشرو بخش و غیره
1995
مشخصات ظاهری
نام خاص و کميت اثر
(404 pages 110 illustrations)
فروست
عنوان فروست
NATO ASI series., Series E,, Applied sciences ;, 298.
یادداشتهای مربوط به مندرجات
متن يادداشت
(brief) Preface. Theoretical Aspects of Epitaxial Growth. Self Assembling Nanostructures/Cluster Formation. Growth on Tilted and Non-(001) Surfaces. Nanostructure Growth on Patterned Silicon Substrates. Nanostructures Prepared by Selective Epitaxy or Regrowth on Patterned Substrates. In-Situ Processing and Device Applications Based on Epitaxial Regrowth.
یادداشتهای مربوط به خلاصه یا چکیده
متن يادداشت
Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching.
During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process.
The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates.
The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.
During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process.
The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates.
The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.
عنوان اصلی به زبان دیگر
عنوان اصلي به زبان ديگر
Proceedings of the NATO Advanced Research Workshop, Ringberg in Rottach Egern, Germany, February 20--24, 1995
موضوع (اسم عام یاعبارت اسمی عام)
موضوع مستند نشده
Epitaxy.
موضوع مستند نشده
Nanostructures.
نام شخص به منزله سر شناسه - (مسئولیت معنوی درجه اول )
مستند نام اشخاص تاييد نشده
edited by Karl Eberl, Pierre M. Petroff, Piet Demeester.
نام شخص - (مسئولیت معنوی برابر )
مستند نام اشخاص تاييد نشده
Karl Eberl
مستند نام اشخاص تاييد نشده
Pierre M Petroff
مستند نام اشخاص تاييد نشده
Piet Demeester
دسترسی و محل الکترونیکی
نام الکترونيکي
مطالعه متن کتاب اطلاعات رکورد کتابشناسی
نوع ماده
[Book]
اطلاعات دسترسی رکورد
تكميل شده
Y
