عنوان

Carrier transport in nanoscale MOS transistors /

شابک

1118871731

شابک

9781118871737

شابک اشتباه

1118871669

شابک اشتباه

9781118871669

شماره

dltt

عنوان اصلي

Carrier transport in nanoscale MOS transistors /

نام عام مواد

[Book]

نام نخستين پديدآور

Hideaki Tsuchiya, Yoshinari Kamakura

نام خاص و کميت اثر

1 online resource

متن يادداشت

Includes bibliographical references and index

متن يادداشت

Emerging Technologies -- Moore's Law and the Power Crisis -- Novel Device Architectures -- High Mobility Channel Materials -- Two-Dimensional (2-D) Materials -- Atomistic Modeling -- References -- First-principles Calculations for Si Nanostructures -- Band Structure Calculations -- Si Ultrathin-body Structures -- Si Nanowires -- Strain Effects on Band Structures: From Bulk to Nanowire -- Tunneling Current Calculations Through Si/SiO₂/Si Structures -- Atomic Models of Si (001)/SiO₂/Si (001) Structures -- Current-voltage Characteristics -- SiO₂ Thickness Dependences -- References -- Quasi-ballistic Transport in Si Nanoscale MOSFETs -- A Picture of Quasi-ballistic Transport Simulated using Quantum-corrected Monte Carlo Simulation -- Device Structure and Simulation Method -- Scattering Rates for 3-D Electron Gas -- Ballistic Transport Limit -- Quasi-ballistic Transport -- Role of Elastic and Inelastic Phonon Scattering -- Multi-sub-band Monte Carlo Simulation Considering Quantum Confinement in Inversion Layers -- Scattering Rainy for 2-D Electron Gas -- Increase in D_ac for SOI MOSFETs -- Simulated Electron Mobilities in Bulk Si and SOl MOSFETs -- Electrical Characteristics of Si DG-MOSFETs -- Extraction of Quasi-ballistic Transport Parameters in Si DG-MOSFETs -- Backscattering Coefficient -- Current Drive -- Gate and Drain Bias Dependences -- Quasi-ballistic Transport in Si Junctionless Transistors -- Device Structure and Simulation Conditions -- Influence of SR Scattering -- Influence of II Scattering -- Backscattering Coefficient -- Quasi-ballistic Transport in GAA-Si Nanowire MOSFETs -- Device Structure and 3DMSB-MC Method -- Scattering Rates for I-D Electron Gas -- I_D - V_G Characteristics and Backscattering Coefficient -- References -- Phonon Transport in Si Nanostructures -- Monte Carlo Simulation Method -- Phonon Dispersion Model -- Particle Simulation of Phonon Transport -- Free Flight and Scattering -- Simulation of Thermal Conductivity -- Thermal Conductivity of Bulk Silicon -- Thermal Conductivity of Silicon Thin Films -- Thermal conductivity of silicon nanowires -- Discussion on Boundary Scattering Effect -- Simulation of Heat Conduction in Devices -- Simulation Method -- Simple 1-D Structure -- FinFET Structure -- References -- Carrier Transport in High-mobility MOSFETs -- Quantum-corrected MC Simulation of High-mobility MOSFETs -- Device Structure and Band Structures of Materials -- Band Parameters of Si, Ge, and III-V Semiconductors -- Polar-optical Phonon (POP) Scattering in III-V Semiconductors -- Advantage of UTB Structure -- Drive Current of III-V, Ge and Si n-MOSFETs -- Source-drain Direct Tunneling in Ultrascaled MOSFETs -- Wigner Monte Carlo (WMC) Method -- Wigner Transport Formalism -- Relation with Quantum-corrected MC Method -- WMC Algorithm -- Description of Higher-order Quantized Subbands -- Application to Resonant-tunneling Diode -- Quantum Transport Simulation of III-V n-MOSFETs with Multi-subbaad WMC (MSB-WMC) Method -- Device Structure -- POP Scattering Rate for 2-D Electron Gas -- 1_D - V_c Characteristics for InGaAs DG-MOSFETs -- Channel Length Dependence of SDT Leakage Current -- Effective Mass Dependence of Subthreshold Current Properties -- References -- Atomistic Simulations of Si, Ge and III-V Nanowire MOSFETs -- Phonon-limited Electron Mobility in Si Nanowires -- Band Structure Calculations -- Electron-phonon Interaction -- Electron Mobility -- Comparison of Phonon-limited Electron Mobilities between Si and. Ge nanowires -- Ballistic Performances of Si and In As Nanowire MOSFETs -- Band Structures -- Top-of-the-barrier Model -- I_D - V_G Characteristics -- Quantum Capacitances -- Power-delay-product -- Ballistic Performances of InSb, InAs, and GaSb Nanowire MOSFETs -- Band Structures -- I_D - V_G Characteristics -- Power-delay-product -- Atomistic Poisson Equation -- Analytical Expressions of Electron-phonon Interaction Hamiltonian Matrices -- References -- 2-D Materials and Devices -- 2-D Materials -- Fundamental Properties of Graphene, Silicene and Germanene -- Features of 2-D Materials as an FET Channel -- Graphene Nanostructures with a Bandgap -- Armchair-edged Graphene Nanoribbons (A-GNRs) -- Relaxation Effects of Edge Atoms -- Electrical Properties of A-GNR-FETs Under Ballistic Transport -- Bilayer Graphenes (BLGs) -- Graphene Nanomeshes (GNMs) -- Influence of Bandgap Opening on Ballistic Electron Transport in BLG and A-GNR-MOSFETs -- Small Bandgap Regime -- Large Bandgap Regime -- Silicene, Germanene and Graphene Nanoribbons -- Bandgap vs Ribbon Width -- Comparison of Band Structures -- Ballistic MOSFETs with Silicene, Germanene and Graphene nanoribbons -- I_D - V_G Characteristics -- Quantum Capacitances -- Channel Charge Density and Average Electron Velocity -- Source-drain Direct Tunneling (SDT) -- Electron Mobility Calculation for Graphene on Substrates -- Band Structure -- Scattering Mechanisms -- Carrier Degeneracy -- Electron Mobility Considering Surface Optical Phonon Scattering of Substrates -- Electron Mobility Considering Charged Impurity Scattering -- Germanane MOSFETs -- Atomic Model for Germanane Nanoribbon Structure -- Band Structure and Electron Effective Mass -- Electron Mobility -- Density-of-states for Carriers in Graphene

بدون عنوان

0

شماره استاندارد بين المللي کتاب و موسيقي

9781118871669

موضوع مستند نشده

Carrier waves-- Mathematical models.

موضوع مستند نشده

Metal oxide semiconductor field-effect transistors.

شماره

ويراست

شماره رده

مستند نام اشخاص تاييد نشده

Tsuchiya, Hideaki

مستند نام اشخاص تاييد نشده

Kamakura, Yoshinari

مستند نام تنالگان تاييد نشده

Ohio Library and Information Network.

تاريخ عمليات

20161031080346.2

قواعد فهرست نويسي ( بخش توصيفي )

rda

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y