عنوان
پدید آورنده
موضوع
رده
TK 7874 .N343 1982
TK
7874
.
N343
1982
کتابخانه
محل استقرار
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
Process and device simulation for MOS-VLSI circuits
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Boston
Name of Publisher, Distributor, etc.
Nijhoff ; Hingham, MA : Distributors for the U.S. and Canada, Kluwer Boston
Date of Publication, Distribution, etc.
1983
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
xii, 619 p.: ill.; 25 cm
SERIES
Other Title Information
NATO ASI series. Series E, Applied sciences ; no. 26
GENERAL NOTES
Text of Note
"Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso
Text of Note
"Published in cooperation with NATO Scientific Affairs Division."
Text of Note
Includes bibliographical references
NOTES PERTAINING TO TITLE AND STATEMENT OF RESPONSIBILITY
Text of Note
edited by Paolo Antognetti ... ]et al.[
ORIGINAL VERSION NOTE
Text of Note
1
TOPICAL NAME USED AS SUBJECT
Entry Element
، Integrated circuits- Very large scale integration- Simulation methods- Congresses
Entry Element
، Metal oxide semiconductors- Simulation methods- Congresses
DEWEY DECIMAL CLASSIFICATION
Number
621
.
381
/73
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK
7874
.
N343
1982
OTHER CLASS NUMBERS
Class number
NO
PERSONAL NAME - PRIMARY RESPONSIBILITY
Entry Element
NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits )2891 : Urbino, Italy(
Relator Code
AU
AU Antognetti, Paolo
TI
