INTERNATIONAL STANDARD BOOK NUMBER
(Number (ISBN
9781420066869(e-book : pdf)
NATIONAL BIBLIOGRAPHY NUMBER
Country Code
IR
Number
E-9242
LANGUAGE OF THE ITEM
.Language of Text, Soundtrack etc
انگلیسی
COUNTRY OF PUBLICATION OR PRODUCTlON
Country of publication
IR
TITLE AND STATEMENT OF RESPONSIBILITY
Title Proper
SiGe and Si strained-layer epitaxy for silicon heterostructure devices
General Material Designation
[Book]
First Statement of Responsibility
/ edited by John D. Cressler
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Boca Raton
Name of Publisher, Distributor, etc.
: CRC Press/Taylor & Francis,
Date of Publication, Distribution, etc.
, c2008.
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
264 p.
Other Physical Details
: ill.
GENERAL NOTES
Text of Note
"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso.
NOTES PERTAINING TO PUBLICATION, DISTRIBUTION, ETC.
Text of Note
Print - Electronic
INTERNAL BIBLIOGRAPHIES/INDEXES NOTE
Text of Note
Includes bibliographical references and index.
OTHER VARIANT TITLES
Variant Title
Silicon heterostructure handbook
TOPICAL NAME USED AS SUBJECT
Bipolar transistors--Materials
Heterostructures.
Silicon--Electric properties
Epitaxy.
PERSONAL NAME - SECONDARY RESPONSIBILITY
Cressler, John D
ORIGINATING SOURCE
Country
ایران
ELECTRONIC LOCATION AND ACCESS
Host name
SiGe and Si strained-layer epitaxy for silicon heterostructure devices
Access number
عادی
Compression information
عادی
Electronic name
E-9242.pdf
Bits per second
0
Contact for access assistance
ایمانی
Electronic Format Type
متن
File size
0
Record control number
E-9242
Public note
انگلیسی
old catalog
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BL
1
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