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عنوان
Transport in metal-oxide-semiconductor structure mobile ions effects on the oxide properties
پدید آورنده
Bentarzi, Hamid.,Hamid Bentarzi
موضوع
، Metal oxide semiconductors,، TECHNOLOGY & ENGINEERING / Electronics / Semiconductors, bisacsh,، TECHNOLOGY & ENGINEERING / Electronics / Solid State, bisacsh
رده
TK
7871
.
99
.
M44
B46
2011
کتابخانه
Library and Documentation Center of Kurdistan University
محل استقرار
استان:
Kurdistan
ـ شهر:
Sanandaj
تماس با کتابخانه :
33624006
-
087
OTHER STANDARD IDENTIFIER
Standard Number
1969
TITLE AND STATEMENT OF RESPONSIBILITY
First Statement of Responsibility
Bentarzi, Hamid.
Title Proper
Transport in metal-oxide-semiconductor structure mobile ions effects on the oxide properties
.PUBLICATION, DISTRIBUTION, ETC
Place of Publication, Distribution, etc.
Berlin ;Heidelberg ;New York
Name of Publisher, Distributor, etc.
Springer
Date of Publication, Distribution, etc.
c2011
PHYSICAL DESCRIPTION
Specific Material Designation and Extent of Item
1 online resource )xiii, 104 p.( , ill.
SERIES
Series Title
Engineering materials.
GENERAL NOTES
Text of Note
Includes bibliographical references and index.
TOPICAL NAME USED AS SUBJECT
Entry Element
، Metal oxide semiconductors
Entry Element
، TECHNOLOGY & ENGINEERING / Electronics / Semiconductors, bisacsh
Entry Element
، TECHNOLOGY & ENGINEERING / Electronics / Solid State, bisacsh
DEWEY DECIMAL CLASSIFICATION
Number
621
.
3815
LIBRARY OF CONGRESS CLASSIFICATION
Class number
TK
7871
.
99
.
M44
B46
2011
PERSONAL NAME - PRIMARY RESPONSIBILITY
Relator Code
AU
Entry Element
Hamid Bentarzi
TI
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