2. To the best of our knowledge, our obtained results indicate improved output brightness rather than reported results in the literatures till now-hole recombination and Forster resonant energy transfer. The device fabricated by ZnO:Cu as HTL and ZnO:Nd as ETL and CdSe/ZnS as an active layer shows peak brightness of 700cdm-LEDs were fabricated by solution processing method and vapor phase deposition. The performances of fabricated devices are based on electron-type semiconductor that they used as hole transport layer (HTL) and electron transport layer (ETL), respectively till now. Engineering of the defect energy levels in the structure of p and n type metal oxides can improve their charge transport properties. Here, doping of Ga and Nd in the structure of crystalline ZnO creates new energy levels as defect levels in conduction bands of ZnO, also doping of Cu in the structure of crystalline ZnO creates new energy levels in valence band. These defect levels can be engineered using synthesis methods and also by doping of different atoms in the structure of materials. Calculations of the electronic structure of purposed materials were performed with the CASTEP code, DFT method in this thesis. Synthesis of nanoparticles was performed by solution processing method. Analyzing of synthesized materials was performed by XRD, UVVis, Photoluminescence (PL) measurements and AFM, SEM, TEM techniques. QD-type and n-LED) are presented that output light in these structures is related to quantum dot layer. So by controlling the size of the quantum dots during the colloidal synthesis process, color of output light will be tunable. Quantum dots (QDs) contain a core and shell; the optical properties of QDs can be improved by passivation of the surface of the core. CdSe/ZnS and CdS/ZnS are the common QDs which used as an active layer. Charge transport layers have important role in these structures too. NiO and ZnO are p-Today artificial lighting is an important part of modern life. However, traditional methods of lighting, such as incandescent lighting are highly inefficient. In recent years, researches improve light emitting diodes technologies as a lighting source. In this project, novel structures of quantum dot based light emitting diodes (QD
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