عنوان

High-K gate dielectrics

شابک

0750309067

کد کشور

IR

شماره

EN-56581

زبان متن نوشتاري يا گفتاري و مانند آن

انگلیسی

کشور محل نشر

IR

عنوان اصلي

High-K gate dielectrics

نام عام مواد

[Book]

نام نخستين پديدآور

/ edited by Michel Houssa

محل نشرو پخش و غیره

Bristol ; Philadelphia

نام ناشر، پخش کننده و غيره

: Institute of Physics,

تاریخ نشرو بخش و غیره

, c2004.

نام خاص و کميت اثر

xi, 601 p. , ill. , 25 cm.

عنوان فروست

(Series in materials science and engineering)

متن يادداشت

Electronic

متن يادداشت

Includes bibiographical references and index.

متن يادداشت

Ch. 4.6. Defect generation under electrical stress: experimental characterization and modelling / M. Houssa -- Sect. 5. Technological Aspects -- Ch. 5.1. Device integration issues / E. W. A. Young and V. Kaushik -- Ch. 5.2. Device architectures for the nano-CMOS era / S. Deleonibus -- Ch. 5.3. High-[kappa] transistor characteristics / J. C. Lee and K. Onishi -- App. Properties of High-[kappa] Materials.

متن يادداشت

Sect. 1. Introduction -- Ch. 1.1. High-[kappa] gate dielectrics: why do we need them? / M. Houssa and Marc Heyns -- Sect. 2. Deposition Techniques -- Ch. 2.1. Atomic layer deposition / M. Ritala -- Ch. 2.2. Chemical vapour deposition / S. A. Campbell and R. C. Smith -- Ch. 2.3. Pulsed laser deposition of dielectrics / D. Blank, L. Doeswijk, K. Karakaya, G. Koster and G. Rijnders -- Sect. 3. Characterization -- Ch. 3.1. Oxygen diffusion / R. M. C. de Almeida and I. J. R. Baumvol -- Ch. 3.2. Defects in stacks of Si with nanometre thick high-[kappa] dielectric layers: characterization and identification by electron spin resonance / A. Stesmans and V. V. Afanas'ev -- Ch. 3.3. Band alignment at the interface of Si and metals with high-permittivity insulating oxides / V. V. Afanas'ev and A. Stesmans -- Ch. 3.4. Electrical characterization, modelling and simulation of MOS structures with high-[kappa] gate stacks / J. L. Autran, D. Munteanu and M. Houssa -- Sect. 4. Theory -- Ch. 4.1. Defects and defect-controlled behaviour in high-[kappa] materials: a theoretical perspective / M. Stoneham, A. Shluger, A. Foster and M. Szymanski -- Ch. 4.2. Chemical bonding and electronic structure of high-[kappa] transition metal dielectrics: applications to interfacial band offset energies and electronically active defects / G. Lucovsky and J. Whitten -- Ch. 4.3. Electronic structure and band offsets of high dielectric constant gate oxides / J. Robertson and P. W. Peacock -- Ch. 4.4. Reduction of the electron mobility in high-[kappa] MOS systems caused by remote scattering with soft interfacial optical phonons / M. V. Fischetti, D. A. Neumayer and E. Cartier -- Ch. 4.5. Ab initio calculations of the structural, electronic and dynamical properties of high-[kappa] dielectrics / G. M. Rignanese, X. Gonze and A. Pasquarello --

عنوان

Series in materials science and engineering

موضوع مستند نشده

Gate array circuits , Materials

موضوع مستند نشده

Metal oxide semiconductors , Materials

موضوع مستند نشده

Metal oxide semiconductors, Complementary , Materials

موضوع مستند نشده

Dielectrics , Research

موضوع مستند نشده

Dielectric devices

شماره رده

مستند نام اشخاص تاييد نشده

Houssa, Michel

کشور

ایران

نام ميزبان

0750309067.pdf

شماره دسترسي

عادی

اطلاعات مختصر

عادی

تاريخ و ساعت مذاکره و دسترسي

0750309067.pdf

نوع فرمت الکترونيکي

متن

وضعیت فهرست نویسی

old catalog

فرمت انتشار

e

نوع ماده

BL

پیشوند ISBD اعمال شده است

1

سطح دسترسي

a

تكميل شده

Y