عنوان

Electrical and optoelectronic properties of the nanodevices composed of two-dimensional materials :

شابک

9789811313554

شابک

9789811313561

شابک

9811313555

شابک

9811313563

شابک اشتباه

9789811313547

شابک اشتباه

9811313547

عنوان اصلي

Electrical and optoelectronic properties of the nanodevices composed of two-dimensional materials :

نام عام مواد

[Book]

ساير اطلاعات عنواني

graphene and molybdenum (IV) disulfide /

نام نخستين پديدآور

Cheng-hua Liu.

محل نشرو پخش و غیره

Singapore :

نام ناشر، پخش کننده و غيره

Springer,

تاریخ نشرو بخش و غیره

[2018]

تاریخ نشرو بخش و غیره

©2018

نام خاص و کميت اثر

1 online resource

عنوان فروست

Springer Theses, Recognizing Outstanding Ph. D. Research,

شاپا ي ISSN فروست

2190-5053

متن يادداشت

Includes bibliographical references.

متن يادداشت

Intro; Supervisor's Foreword; Abstract; Acknowledgements; Contents; 1 Introduction; References; 2 Theoretical Background; 2.1 Physical Properties of Graphene; 2.1.1 Electrical Structure and Zero Band Gap; 2.1.2 Pseudospin; 2.1.3 Klein Tunneling; 2.1.4 Quantum Hall Effect; 2.1.5 Shubnikov-de Haas Oscillation and Massless Effective Mass; 2.1.6 Quantum Hall Plateau-Plateau Transition; 2.1.7 Weak Localization; 2.2 Molybdenum Disulfide (MoS2); 2.2.1 Photoconductivity Effect; 2.2.2 Persistent Photoconductivity; References; 3 Experimental Methods; 3.1 Resist-Free Fabrication.

متن يادداشت

3.2 Physical Property Measurement System3.3 Optical Measurement Systems; 3.4 Atomic Force Microscopy; 3.5 OTS-Functionalized Substrates and Electrical Measurement Method; 3.5.1 OTS-Functionalized Substrates; 3.5.2 Two-Terminal Conductance Measurements; References; 4 Distinctive Magnetotransport of Graphene p-n-p Junctions via Resist-Free Fabrication and Controlled Diffusion of Metallic Contact; 4.1 Introduction; 4.2 Fabrication; 4.3 Experimental Results; 4.4 Demonstration of p-n Junction Devices; 4.5 Conclusion; References.

متن يادداشت

5 Observation of Quantum Hall Plateau-Plateau Transition and Scaling Behavior of the Zeroth Landau Level in Graphene p-n-p Junction5.1 Introduction; 5.2 Fabrication; 5.3 Experimental Results; 5.3.1 The Doping Effect from Titanium Diffusion; 5.3.2 The Doping Effect Simulated by Theoretical Dipining Model; 5.3.3 Characteristics of Graphene p-n-p Junction Devices; 5.3.4 Quantum Hall Effect in p-n-p Junction; 5.3.5 Scaling Behavior; 5.3.6 The MR and the Distribution of the Energy Levels of the LLs; 5.4 Conclusion; References.

متن يادداشت

6 Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect6.1 Introduction; 6.2 Fabrication; 6.3 Measurement Method; 6.4 Experimental Results and Discussion; 6.4.1 The PPC Effect in a Monolayer MoS2 Transistor; 6.4.2 Temperature Dependence of PPC Relaxation; 6.4.3 The Subtract Effect of PPC; 6.4.4 Discussion of PPC Mechanism; 6.4.5 The Relationship Between the PPC Effect and Transport Behavior; 6.4.6 Fitting of the PPC Relaxation Curves; 6.4.7 Gate Voltage Dependence of the PPC; 6.4.8 Transport Characteristics of the MoS2 FET.

متن يادداشت

6.4.9 Carrier Mobility Dependence of the PPC6.5 Conclusion; References; 7 Conclusion.

بدون عنوان

0

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

متن يادداشت

This thesis focuses on the transport and magneto-transport properties of graphene p-n-p junctions, such as the pronounced quantum Hall effect, a well-defined plateau-plateau transition point, and scaling behavior. In addition, it demonstrates persistent photoconductivity (PPC) in the monolayer MoS2 devices, an effect that can be attributed to random localized potential fluctuations in the devices. Further, it studies scaling behavior at zeroth Landau level and high performance of fractional values of quantum Hall plateaus in these graphene p-n-p devices. Moreover, it demonstrates a unique and efficient means of controlling the PPC effect in monolayer MoS2. This PPC effect may offer novel functionalities for MoS2-based optoelectronic applications in the future.

منبع سفارش / آدرس اشتراک

Springer Nature

شماره انبار

com.springer.onix.9789811313554

عنوان

Electrical and optoelectronic properties of the nanodevices composed of two-dimensional materials.

شماره استاندارد بين المللي کتاب و موسيقي

9789811313547

موضوع مستند نشده

Graphene.

موضوع مستند نشده

Molecular machinery.

موضوع مستند نشده

Molybdenum disulfide.

موضوع مستند نشده

Optoelectronic devices.

موضوع مستند نشده

Graphene.

موضوع مستند نشده

Molecular machinery.

موضوع مستند نشده

Molybdenum disulfide.

موضوع مستند نشده

Optoelectronic devices.

موضوع مستند نشده

TECHNOLOGY & ENGINEERING-- Mechanical.

موضوع مستند نشده

TBN

موضوع مستند نشده

TBN

موضوع مستند نشده

TEC-- 009070

شماره

ويراست

شماره رده

مستند نام اشخاص تاييد نشده

Liu, Cheng-hua

تاريخ عمليات

20200823224752.0

قواعد فهرست نويسي ( بخش توصيفي )

pn

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y