عنوان

Chemical vapor deposition growth and characterization of two-dimensional hexagonal boron nitride /

شابک

9789811088094

شابک

9811088098

شابک اشتباه

9789811088087

شابک اشتباه

981108808X

عنوان اصلي

Chemical vapor deposition growth and characterization of two-dimensional hexagonal boron nitride /

نام عام مواد

[Book]

نام نخستين پديدآور

Roland Yingjie Tay.

محل نشرو پخش و غیره

Singapore :

نام ناشر، پخش کننده و غيره

Springer,

تاریخ نشرو بخش و غیره

2018.

نام خاص و کميت اثر

1 online resource

عنوان فروست

Springer theses

متن يادداشت

Doctoral thesis accepted by the Nanyang Technological University, Singapore.

متن يادداشت

Includes bibliographical references.

متن يادداشت

Intro; Supervisor's Foreword; Abstract; Parts of this thesis have been published in the following journal articles:; List of Publications; Acknowledgements; Contents; Abbreviations; List of Figures; List of Tables; 1 Synthesis of Two-Dimensional Hexagonal Boron Nitride; 1.1 Introduction; 1.2 Motivation; 1.3 Objectives and Scope; 1.4 Major Contributions of This Thesis; 1.5 Organization of This Thesis; References; 2 Literature Review; 2.1 Structure, Properties and Applications of h-BN; 2.2 Fabrication of Atomically Thin h-BN Nanosheets; 2.2.1 Mechanical Exfoliation.

متن يادداشت

2.2.2 Liquid Phase Exfoliation2.2.3 Chemical Vapor Deposition; 2.3 Characterization of CVD-Grown h-BN Films; 2.3.1 Scanning Electron Microscopy; 2.3.2 Atomic Force Microscopy; 2.3.3 Transmission Electron Microscopy; 2.3.4 Raman Spectroscopy; 2.3.5 X-ray Photoelectron Spectroscopy; 2.3.6 Ultraviolet-visible Spectroscopy; 2.3.7 Four-Point Probe; 2.4 Methods; 2.4.1 Transfer Process; 2.4.1.1 Wet Transfer; 2.4.1.2 Electrochemical Delamination; 2.4.2 Device Fabrication; 2.4.3 Characterization; References; 3 Controllable Growth of Hexagonal Boron Nitride Films on Cu Foils; 3.1 Introduction.

متن يادداشت

3.2 Experimental Section3.2.1 APCVD Growth of h-BN Films; 3.3 Results and Discussion; 3.3.1 Substrate Position; 3.3.2 Growth Temperature; 3.3.3 Growth Time; 3.3.4 Precursor Conditions; 3.3.5 Characterization of Large-Area h-BN Thin Films; 3.3.6 Triangular Shaped h-BN Domains; 3.4 Summary; References; 4 Growth of Nanocrystalline Boron Nitride Films on Dielectric Substrates; 4.1 Introduction; 4.2 Experimental Section; 4.2.1 CVD Growth of NCBN Films; 4.3 Results and Discussion; 4.4 Summary; References; 5 Growth of Large Single Crystalline Monolayer Boron Nitride Hexagons; 5.1 Introduction.

متن يادداشت

5.2 Experimental Section5.2.1 Electropolishing of Cu Foils; 5.2.2 APCVD Growth of h-BN Single Crystals; 5.3 Results; 5.3.1 Growth of Hexagonal Shaped h-BN Domains; 5.4 Discussion; 5.5 Summary; References; 6 Growth of Oriented Single Crystalline Hexagonal Boron Nitride Monolayers; 6.1 Introduction; 6.2 Experimental Section; 6.2.1 APCVD Growth of h-BN on Re-solidified Cu; 6.3 Results; 6.3.1 Growth of Oriented h-BN Domains; 6.3.2 Structural Characterization; 6.3.3 Characterization of Aligned h-BN Films; 6.4 Discussion; 6.5 Summary; References.

متن يادداشت

7 A New Single-Source Precursor for Monolayer h-BN and h-BCN Thin Films7.1 Introduction; 7.2 Experimental Section; 7.2.1 APCVD Growth of h-BN and h-BCN Films; 7.3 Results and Discussion; 7.3.1 Growth of Monolayer h-BN Single Crystals; 7.3.2 Growth of Few-Layer h-BCN Films; 7.4 Summary; References; 8 Conclusions and Recommendations for Future Work; 8.1 Conclusions; 8.2 Recommendations for Future Work; 8.2.1 Terminating Edges of Hexagonal Shaped h-BN Domains; 8.2.2 Defect Lines; 8.2.3 Adlayer Islands; References.

بدون عنوان

0

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

متن يادداشت

This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors' understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose.

منبع سفارش / آدرس اشتراک

Springer Nature

شماره انبار

com.springer.onix.9789811088094

عنوان

Chemical vapor deposition growth and characterization of two-dimensional hexagonal boron nitride.

شماره استاندارد بين المللي کتاب و موسيقي

9789811088087

موضوع مستند نشده

Boron nitride.

موضوع مستند نشده

Chemical vapor deposition.

موضوع مستند نشده

Electronics-- Materials.

موضوع مستند نشده

Nanostructured materials.

موضوع مستند نشده

Boron nitride.

موضوع مستند نشده

Chemical vapor deposition.

موضوع مستند نشده

Electronics-- Materials.

موضوع مستند نشده

Nanostructured materials.

موضوع مستند نشده

TECHNOLOGY & ENGINEERING-- Mechanical.

موضوع مستند نشده

TEC-- 009070

موضوع مستند نشده

TJFD

شماره

ويراست

شماره رده

مستند نام اشخاص تاييد نشده

Tay, Roland Yingjie

تاريخ عمليات

20200823223021.0

قواعد فهرست نويسي ( بخش توصيفي )

pn

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y