عنوان

Properties of synthetic two-dimensional materials and heterostructures /

شابک

3030003329

شابک

3030003337

شابک

9783030003326

شابک

9783030003333

شابک اشتباه

3030003310

شابک اشتباه

9783030003319

عنوان اصلي

Properties of synthetic two-dimensional materials and heterostructures /

نام عام مواد

[Book]

نام نخستين پديدآور

Yu-Chuan Lin.

محل نشرو پخش و غیره

Cham, Switzerland :

نام ناشر، پخش کننده و غيره

Springer,

تاریخ نشرو بخش و غیره

[2018]

تاریخ نشرو بخش و غیره

©2018

نام خاص و کميت اثر

1 online resource :

ساير جزييات

colour illustrations

عنوان فروست

Springer theses

متن يادداشت

"Doctoral Thesis accepted by Pennsylvania State University, State College, PA, USA."

متن يادداشت

Includes bibliographical references.

متن يادداشت

Intro; Supervisor's Foreword; Preface; Acknowledgments; Contents; Chapter 1: Two-Dimensional Materials; 1.1 Introduction; 1.2 Classification and Thermal Stability; 1.3 Graphene: The Beginning of 2D Materials Research; 1.4 Monolayer Transition Metal Dichalcogenides: Real 2D Semiconductors; 1.5 2D Materials as the Building Blocks for vdW Heterostructures; 1.5.1 Making vdW Heterostructures via Stacking Exfoliated 2D Layers; 1.5.2 Applications of vdW Heterostructures for Electrical and Optical Devices; 1.5.3 Interfacial Imperfection; References.

متن يادداشت

2.6.1 Scalable Process for Synthetic 2D SemiconductorsReferences; Chapter 3: Properties of Atomically Thin WSe2 Grown Via Metal-Organic Chemical Vapor Deposition; 3.1 Impact of Growth Conditions and Substrates on Properties of WSe2; 3.1.1 Introduction; 3.1.2 Experimental Methods; Material Synthesis; Materials Characterization; Device Fabrication and Tunneling Current Measurements; 3.1.3 Results and Discussion; 3.1.4 Conclusions for Sect. 3.1; 3.2 Toward Large-Area and Epitaxy-Grade WSe2; 3.2.1 Introduction; 3.2.2 Experimental Methods; Materials Characterization.

متن يادداشت

Chapter 2: Synthesis and Properties of 2D Semiconductors2.1 Introduction; 2.2 Molecular Absorption and Desorption Process During Thin-Film Deposition; 2.2.1 Nucleation and Growth; 2.2.2 Epitaxial Relationship Between Deposited Materials and Substrates; 2.3 Synthesis Techniques for 2D TMDC; 2.3.1 Powder Vaporization; 2.3.2 Metal-Organic Chemical Vapor Deposition; 2.3.3 Epitaxial Graphene Synthesis; 2.4 Vertical and Radical Heterostructures Based on Synthetic 2D Materials; 2.5 2D Materials Electronics: Interface Is Critical; 2.6 2D Semiconductors for Low-Power Electronic Applications.

متن يادداشت

Chapter 5: Atomically Thin Heterostructures Based on Monolayer WSe2 and Graphene5.1 Introduction; 5.2 Experimental Methods; 5.2.1 Growth and Properties of WSe2 Layers on Graphene; 5.2.2 Diode Fabrication; 5.2.3 LEEM for Assessment of the Graphene Layer Thickness; 5.3 Results and Discussion; 5.4 Conclusions; References; Chapter 6: Tuning Electronic Transport in WSe2-Graphene; 6.1 Introduction; 6.2 Experimental Methods; 6.3 Results and Discussion; 6.3.1 WSe2 Synthesis and Buffer-Layer Decoupling; 6.3.2 LEEM/LEER Measurements and Analysis.

متن يادداشت

Impurity of Precursor and Growth Steps of Epitaxial WSe2Electrolyte-Gating Electrical Measurement; 3.2.3 Results and Discussion; Epitaxial Growth of WSe2; Kinetics for WSe2 Growth; Domain Boundaries of Epitaxial WSe2; WSe2-Sapphire Interface; Electronic Transport of Epitaxial WSe2; 3.3 Conclusions; References; Chapter 4: Direct Synthesis of van der Waals Solids; 4.1 Introduction; 4.2 Experimental Methods; 4.2.1 Materials Synthesis; 4.2.2 Fabrication and Measurement of MoS2 Photosensors; 4.2.3 Materials Characterization; 4.3 Results and Discussion; 4.4 Conclusions; References.

بدون عنوان

0

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

بدون عنوان

8

متن يادداشت

This thesis represents a significant advance in our understanding of the synthesis and propertiesof two-dimensional (2D) materials. The author's work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of "epi-grade" 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore's law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.

منبع سفارش / آدرس اشتراک

Springer Nature

شماره انبار

com.springer.onix.9783030003326

عنوان

Properties of synthetic two-dimensional materials and heterostructures.

شماره استاندارد بين المللي کتاب و موسيقي

9783030003319

موضوع مستند نشده

Graphene.

موضوع مستند نشده

Heterostructures.

موضوع مستند نشده

Semiconductors.

موضوع مستند نشده

Condensed matter physics (liquid state & solid state physics)

موضوع مستند نشده

Electronic devices & materials.

موضوع مستند نشده

Graphene.

موضوع مستند نشده

Heterostructures.

موضوع مستند نشده

Materials science.

موضوع مستند نشده

Nanotechnology.

موضوع مستند نشده

Semi-conductors & super-conductors.

موضوع مستند نشده

Semiconductors.

موضوع مستند نشده

TECHNOLOGY & ENGINEERING-- Mechanical.

موضوع مستند نشده

TEC-- 009070

موضوع مستند نشده

TJFD

موضوع مستند نشده

TJFD5

شماره

ويراست

شماره رده

مستند نام اشخاص تاييد نشده

Lin, Yu-Chuan

تاريخ عمليات

20200823071647.0

قواعد فهرست نويسي ( بخش توصيفي )

pn

نام الکترونيکي

نوع ماده

[Book]

تكميل شده

Y